Inventor: Walter Rieger

Address: Arnoldstein, AT
No. of patents: 28
Last patent issue date: 01/29/2013

Number	Title	Issue Date
8362551	Semiconductor device In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A ...	01/29/2013
8334564	Field plate trench transistor and method for producing it A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by a...	12/18/2012
8314447	Semiconductor including lateral HEMT A semiconductor including a lateral HEMT and to a method for production of a lateral HEMT is disclosed. In one embodiment, the lateral HEMT has a substrate and a first layer, wherein the first layer has a semiconductor material of a first conduction type and is arra...	11/20/2012
8193559	Monolithic semiconductor switches and method for manufacturing One aspect is monolithic semiconductor switches and method for manufacturing. One embodiment provides a semiconductor die with a first n-type channel FET and a second n-type channel FET. A source of the first n-type channel FET and a drain of the second n-type chann...	06/05/2012
8093654	Vertical transistor component A method for producing a vertical transistor component includes providing a semiconductor substrate, applying an auxiliary layer to the semiconductor substrate, and patterning the auxiliary layer for the purpose of producing at least one trench which extends as far ...	01/10/2012
8084865	Anchoring structure and intermeshing structure An anchoring structure for a metal structure of a semiconductor device includes an anchoring recess structure having at least one overhanging side wall, the metal structure being at least partly arranged within the anchoring recess structure. ...	12/27/2011
8067796	Semiconductor component with cell structure and method for producing the same A semiconductor component comprises a semiconductor body comprising a first component electrode arranged on one of the surfaces of the semiconductor body, a second component electrode arranged on one of the surfaces of the semiconductor body, and a component control...	11/29/2011
8044459	Semiconductor device with trench field plate including first and second semiconductor materials In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A ...	10/25/2011
8022474	Semiconductor device A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includ...	09/20/2011
7999287	Lateral HEMT and method for the production of a lateral HEMT In one embodiment a lateral HEMT has a first layer, the first layer including a semiconducting material, and a second layer, the second layer including a semiconducting material and being at least partially arranged on the first layer. The lateral HEMT further has a...	08/16/2011
7943955	Monolithic semiconductor switches and method for manufacturing One aspect is monolithic semiconductor switches and method for manufacturing. One embodiment provides one semiconductor die with a first and a second FET. One of source/drain of the first FET and one of source/drain of the second FET are electrically coupled to at l...	05/17/2011
7893486	Field plate trench transistor and method for producing it A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by a...	02/22/2011
7875951	Semiconductor with active component and method for manufacture A semiconductor with active component and method for manufacture. One embodiment provides a semiconductor component arrangement having an active semiconductor component and a semiconductor body having a first semiconductor zone, a third semiconductor zone, and also ...	01/25/2011
7851349	Method for producing a connection electrode for two semiconductor zones arranged one above another A method for producing a connection electrode for a first semiconductor zone and a second semiconductor zone includes producing a trench extending through the first semiconductor zone right into the second semiconductor zone in such a way that the first semiconducto...	12/14/2010
7833862	Semiconductor device and method for forming same A semiconductor device and method. One embodiments provides a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material, a field electrode formed in lower portion of the trench, a cover comprising a second material above...	11/16/2010
7767527	Method for producing a vertical transistor component A method for producing a vertical transistor component includes steps of providing a semiconductor substrate, applying an auxiliary layer to the semiconductor substrate, and patterning the auxiliary layer for the purpose of producing at least one trench which extend...	08/03/2010
7465987	Field electrode trench transistor structure with voltage divider A trench transistor structure having a field electrode arrangement formed in trenches is disclosed. In one embodiment, the field electrode arrangement is conductively connected to subvoltage taps of a voltage divider for the purpose of stabilizing the potentials on ...	12/16/2008
7307010	Method for processing a thin semiconductor substrate A method for processing a semiconductor substrate less than 200 μm thick has been provided. The substrate has one or a plurality of semiconductor elements, which may be identical or different. The substrate is arranged onto a chuck during processing, the front side...	12/11/2007
7250343	Power transistor arrangement and method for fabricating it In the case of the cost-effective method according to the invention for fabricating a power transistor arrangement, a trench power transistor arrangement (1) is fabricated with four patterning planes each containing a lithography step. The power transistor ar...	07/31/2007
7186618	Power transistor arrangement and method for fabricating it When fabricating trench power transistor arrangements (1) with active cell array trenches (5) and passive connecting trenches (6), the cell array trenches (5) are provided in greater width than the connecting trenches (6). An auxil...	03/06/2007
7091573	Power transistor The power transistor has a trench cell in a semiconductor body. A lower edge of the gate electrode has a profile which is not horizontal, i.e., not planar with respect to the field electrode. ...	08/15/2006
7005351	Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration A method for fabricating a transistor configuration including at least one trench transistor cell has a gate electrode and a field electrode disposed in a trench below the gate electrode. The trenches are formed in a semiconductor substrate. A drift zone, a channel ...	02/28/2006
6998678	Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diode The present invention relates to a semiconductor arrangement with a MOS transistor which has a gate electrode (40), arranged in a trench running in the vertical direction of a semiconductor body (100), and a Schottky diode which is connected in paralle...	02/14/2006
6927101	Field-effect-controllable semiconductor component and method for fabricating the component A method for fabricating a field-effect-controllable semiconductor component includes providing a configuration having a semiconductor body with a front side, a rear side, a first terminal zone of a first conduction type, a channel zone of a second conduction type f...	08/09/2005
6891223	Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell Transistor configurations have trench transistor cells disposed along trenches in a semiconductor substrate with two or more electrode structures disposed in the trenches, and also metallizations are disposed above a substrate surface of the semiconductor substrate....	05/10/2005
6858895	Circuit configuration having a field-effect transistor operable at higher frequencies A circuit configuration for the switch-on/off control of a DMOS power transistor has at least one first gate electrode and, separate from the latter, a second gate electrode, which are capacitively coupled to one another by a capacitance distributed over the field-e...	02/22/2005
6806533	Semiconductor component with an increased breakdown voltage in the edge area A semiconductor component has a cell array formed in a semiconductor body with a number of identical transistor cells and at least one edge cell formed at an edge of the cell array. Each of the transistor cells has a control electrode, which is formed in a trench, a...	10/19/2004
6690062	Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance The switching behavior of a transistor configuration is improved by providing a shielding electrode in an edge region. The shielding electrode surrounds at least sections of an active cell array. The capacitance between an edge gate structure and a drain ...	02/10/2004

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Inventor: Walter Rieger