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Inventor: Toshiaki Miyajima


Address: Nara, JP
No. of patents: 2
Last patent issue date: 06/29/1993

NumberTitleIssue Date
5223446Semiconductor device with a photodetector switching device grown on a recrystallized monocrystal silicon film
A semiconductor device is disclosed which comprises a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an ...
06/29/1993
5105090Semiconductor device with a photodetector switching device
A semiconductor device is disclosed which comprises a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an ...
04/14/1992
 
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