Inventor: Toru Tatsumi

Address: Tokyo, JP
No. of patents: 36
Last patent issue date: 09/18/2012

Number	Title	Issue Date
8269303	SiGe photodiode The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is red...	09/18/2012
8203176	Dielectric, capacitor using dielectric, semiconductor device using dielectric, and manufacturing method of dielectric To make it possible to significantly suppress the leakage current in a semiconductor device having a capacitor structure using a dielectric film. There is provided a composite oxide dielectric which is mainly composed of Zr, Al and O, and which has a composition rat...	06/19/2012
8178934	Dielectric film with hafnium aluminum oxynitride film The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made...	05/15/2012
8053311	Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of...	11/08/2011
7968463	Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw ...	06/28/2011
7701018	Semiconductor device and method for manufacturing same A semiconductor device comprising a first semiconductor region and a second semiconductor region, (a) wherein a field effect transistor is comprised of the first semiconductor region comprising at least one semiconductor layer(s) p...	04/20/2010
7679148	Semiconductor device, production method and production device thereof The task of the present invention is to enable formation of a gate insulating film structure having a good-quality interface between a silicon oxide film and silicon in an interface between a high dielectric constant thin film and a silicon substrate to provide a se...	03/16/2010
7612416	Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same A semiconductor device comprising: a MIS type field effect transistor which comprises a semiconductor raised portion protruding from a substrate plane, a gate electrode extending over the semiconductor raised portion from the top onto the opposite side faces of the ...	11/03/2009
7592674	Semiconductor device with silicide-containing gate electrode and method of fabricating the same There is provided a semiconductor device which is capable of solving a problem of threshold control in CMOS transistor, accompanied with combination of a gate insulating film having a high dielectric constant and a metal gate electrode, and significantly enhancing p...	09/22/2009
7476916	Semiconductor device having a mis-type fet, and methods for manufacturing the same and forming a metal oxide film [Problems] To provide a semiconductor device including a MIS-type FET having an excellent characteristic of low leakage current despite use of a high-K material of a high dielectric constant in a gate insulating film. [Means for solving Problems] A MIS-type field-ef...	01/13/2009
7354622	Method for forming thin film and apparatus for forming thin film A shower head having a plurality of ejection holes for supplying an organic metal gas at uniform density to the surface of a substrate and a plurality of ejection holes for supplying an oxidizing gas at uniform density to the same is provided in a reaction furnace o...	04/08/2008
6790741	Process for producing a semiconductor device In forming a metal oxide dielectric film of perovskite type for capacitor, an array of lower electrodes and a crystallization-assisting conductive film are simultaneously formed. The crystallization-assisting conductive film is formed outside the lower electrode arr...	09/14/2004
6573211	Metal oxide dielectric film A metal oxide dielectric film of perovskite type represented by ABO3, wherein a composition ratio between an A-element and a B-element contained in the film satisfies the following Equation (1-1), and an amount of an oxide of the A-element cont...	06/03/2003
6459126	Semiconductor device including a MIS transistor A MIS transistor has a gate insulating film made of silicon oxynitride and having a specific dielectric constant which is larger than the expected specific dielectric constant calculated based on a weighted average of the specific dielectric constants bas...	10/01/2002
6372628	Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device A structure and manufacturing process of a low dielectric constant interlayer insulating film used between wiring layers and semiconductor devices using such film are disclosed. The insulating film which can withstand in an actual process comprises an amo...	04/16/2002
6180531	Semiconductor manufacturing method A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are ele...	01/30/2001
6121120	Method for manufacturing semiconductor device capable of flattening surface of selectively-grown silicon layer In a method for manufacturing a semiconductor device, an impurity diffusion region is formed within a semiconductor substrate. Then, a chemical dry etching process or a heating process is carried out to remove a contamination layer from the impurity diffu...	09/19/2000
6091081	Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film A structure and manufacturing process of a low dielectric constant interlayer insulating film used between wiring layers and semiconductor devices using such film are disclosed. The insulating film which can withstand in an actual process comprises an amo...	07/18/2000
6077355	Apparatus and method for depositing a film on a substrate by chemical vapor deposition There is provided an apparatus for accomplishing chemical vapor deposition, including a reaction chamber in which a film is deposited on a substrate by chemical vapor deposition, a source supply for supplying source to the reaction chamber for accomplishi...	06/20/2000
6075253	Monocrystalline semiconductor photodetector A semiconductor photodetector having a planar structure, including a first silicon layer having a first conductivity and formed with a recess, a silicon dioxide film covering a sidewall of the recess therewith, a germanium monocrystal layer formed in the ...	06/13/2000
6071797	Method for forming amorphous carbon thin film by plasma chemical vapor deposition In a method of forming an amorphous carbon thin film with a plasma chemical vapor deposition method, at least one of a hydrocarbon gas and a carbon fluoride gas is supplied in a reaction chamber as a material gas. By applying a high voltage between two el...	06/06/2000
6060391	Vapor phase growth method A heating mechanism for heating a substrate is disposed in a growth chamber, a bulb capable of controlling the quantity of gas flowing into the growth chamber is provided between a plurality of organic metal gas sources and the growth chamber. A plasma ch...	05/09/2000
6030894	Method for manufacturing a semiconductor device having contact plug made of Si/SiGe/Si On a main surface of a silicon substrate of one conductivity type, a diffusion layer of the opposite conductivity type is formed, and the main surface of the silicon substrate is covered by an insulator film. The insulator film is formed with a contact ho...	02/29/2000
5946570	Process for fabricating semiconductor device having semiconductor layers epitaxially grown from active areas without short-circuit on field insulating layer A memory cell of a semiconductor dynamic random access memory device requires a bit line contact hole open to a drain region of a cell transistor for connecting a bit line to the drain region and a node contact hole open to a source region for connecting ...	08/31/1999
5909059	Semiconductor device having contact plug and method for manufacturing the same On a main surface of a silicon substrate of one conductivity type, a diffusion layer of the opposite conductivity type is formed, and the main surface of the silicon substrate is covered by an insulator film. The insulator film is formed with a contact ho...	06/01/1999
5895948	Semiconductor device and fabrication process thereof A silicon layer serving as a contact plug directly connected to a diffusion layer of a MOS transistor is provided. On a surface of an N- type diffusion layer in self-alignment with a silicon nitride layer spacer and a field oxide layer, an N	04/20/1999
5866920	Semiconductor device and manufacturing method of the same A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are ele...	02/02/1999
5723379	Method for fabricating polycrystalline silicon having micro roughness on the surface A method for fabricating a polycrystalline silicon having a roughed surface, which is useful for a capacitor electrode is disclosed. The method is featured by depositing a polycrystalline silicon layer in such a manner that grains of silicon are caused at...	03/03/1998
5691249	Method for fabricating polycrystalline silicon having micro roughness on the surface A method for fabricating a polycrystalline silicon having a roughed surface, which is useful for a capacitor electrode is disclosed. The method is featured by depositing a polycrystalline silicon layer in such a manner that grains of silicon are caused at...	11/25/1997
5623243	Semiconductor device having polycrystalline silicon layer with uneven surface defined by hemispherical or mushroom like shape silicon grain A semiconductor device having a roughed surface, which is useful for a capacitor electrode is disclosed. The device is featured by depositing a polycrystalline silicon layer in such a manner that polycrystalline grains having a hemispherical like shape or...	04/22/1997
5571735	Method of manufacturing a semiconducter device capable of easily forming metal silicide films on source and drain regions In a method of manufacturing a semiconductor device, a step (d) of forming metal silicide films (20) on source and drain regions (17, 18) and on gate electrodes (71, 81) comprises selectively depositing silicon thin films (19) on the source and drain regi...	11/05/1996
5441012	Thin film deposition method for wafer A thin film deposition method consists of placing a wafer or substrate whose surface contains at least two kinds of materials inside a vacuum chamber or vessel, supplying a reactant gas into the vacuum chamber or vessel, the reactant gas containing molecu...	08/15/1995
5385863	Method of manufacturing polysilicon film including recrystallization of an amorphous film A method of fabricating a polysilicon film whose crystal grain size can be controlled in a wide range and which has a large surface area and an application thereof to a DRAM are disclosed. In polycrystallizing an amorphous silicon film having a substantia...	01/31/1995
5366917	Method for fabricating polycrystalline silicon having micro roughness on the surface A method for fabricating a polycrystalline silicon having a roughed surface, which is useful for a capacitor electrode is disclosed. The method is featured by depositing a polycrystalline silicon layer in such a manner that grains of silicon are caused at...	11/22/1994
5284521	Vacuum film forming apparatus A vacuum film forming apparatus including a vacuum vessel having an interior divided into a first vacuum chamber and a second vacuum chamber. First evacuating means is arranged for the first vacuum chamber while it is communicated with the first vacuum ch...	02/08/1994
5234862	Thin film deposition method A thin film deposition method consists of depositing a thin film on a wafer by supplying a reactant gas molecules toward and onto the wafer within a vacuum vessel or chamber. The pressure within the vacuum vessel is set to the pressure under which the mea...	08/10/1993

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Inventor: Toru Tatsumi