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| Number | Title | Issue Date |
| 8334215 | Substrate processing method and substrate processing apparatus A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen(O2) or oxygen/containing gas supplied to a processi... | 12/18/2012 |
| 8178445 | Substrate processing apparatus and manufacturing method of semiconductor device using plasma generation A manufacturing method for a semiconductor device, that loads a substrate on which a film containing oxygen atoms, chlorine atoms, and metal atoms is formed into a processing chamber so as to be supported by a substrate support part. The substrate is heated by the s... | 05/15/2012 |
| 8084315 | Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film... | 12/27/2011 |
| 8071446 | Manufacturing method of semiconductor device and substrate processing apparatus A manufacturing method of a semiconductor device, including the steps of: loading into a processing chamber a substrate having a high dielectric gate insulating film and a metal electrode, with a side wall exposed by etching; applying oxidation processing to the sub... | 12/06/2011 |
| 8066894 | Substrate processing method and substrate processing apparatus A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a ... | 11/29/2011 |
| 7795156 | Producing method of semiconductor device Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconduct... | 09/14/2010 |
