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| Number | Title | Issue Date |
| 7453098 | Vertical electrode structure of gallium nitride based light emitting diode A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and furthe... | 11/18/2008 |
| 7345315 | Gallium nitride based light-emitting device A manufacturing method and a thus produced light-emitting structure for a white colored light-emitting device (LED) and the LED itself are disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white c... | 03/18/2008 |
| 7279347 | Method for manufacturing a light-emitting structure of a light-emitting device (LED) A method for manufacturing a light-emitting structure of a light-emitting device (LED) is disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so... | 10/09/2007 |
| 7208752 | Structure and manufacturing of gallium nitride light emitting diode A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semic... | 04/24/2007 |
| 7154163 | Epitaxial structure of gallium nitride series semiconductor device utilizing two buffer layers An epitaxial structure of a gallium nitride series semiconductor device and a process of forming the same are described. A first buffer layer of gallium nitride is epitaxially formed on a substrate at a first temperature. A second buffer layer of indium gallium nitr... | 12/26/2006 |
| 7119374 | Gallium nitride based light emitting device and the fabricating method for the same A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light wh... | 10/10/2006 |
| 7001824 | Gallium nitride vertical light emitting diode structure and method of separating a substrate and a thin film in the structure A gallium nitride (GaN) vertical light emitting diode (LED) structure and a method of separating a substrate and a thin film thereon in the GaN vertical LED are described. The structure has a metal reflective layer for reflecting light. The method provides a laser a... | 02/21/2006 |
| 6992331 | Gallium nitride based compound semiconductor light-emitting device Disclosed are a GaN based compound semiconductor light emitting diode (LED) and a manufacturing method therefor. In the LED, a combination of a light extraction layer and an adaptive layer is formed over a multi-layer epitaxial structure,wherein the light extraction... | 01/31/2006 |
| 6933160 | Method for manufacturing of a vertical light emitting device structure Disclosed are a vertical GaN based light-emitting device (LED) structure and the manufacturing method thereof. In the structure and the corresponding method, a substrate unit having a mask is used to form a multi-layer epitaxial structure and the substrate and the m... | 08/23/2005 |
