Bizarre Patents
Cloaking System Using Optoelectronically Controlled Camouflage
A Cloaking System designed to operate in the visible light spectrum, utilizes optoelectronics and/or photonic components to conceal an object within it.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 6628542 | Magnetoresistive device and magnetic memory using the same A magnetoresistive device has a first magnetic layer, a nonmagnetic layer, and a second magnetic layer, with the nonmagnetic layer being interposed between the first and second magnetic layers, the first and second magnetic layers having perpendicular mag... | 09/30/2003 |
| 6519179 | Magnetic tunnel junction device, magnetic memory adopting the same, magnetic memory cell and access method of the same A closed magnetic circuit layer is formed on a ferromagnetic layer serving as a memory layer of a magnetic tunnel junction device, in such a manner that a closed magnetic circuit layer is formed via a metal layer with a spacing at a central portion. With ... | 02/11/2003 |
| 6504197 | Magnetic memory element and magnetic memory using the same A magnetic memory element has a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer disposed between these ferromagnetic layers. The non-magnetic layer has an electrical characteristic that is changeable depending on an exter... | 01/07/2003 |
| 6442064 | Magnetic tunnel junction element and magnetic memory using the same A magnetic tunnel junction element includes a first magnetic layer and a second magnetic layer acting as a memory layer, and a first insulating layer sandwiched between the first and second magnetic layers. Further, the magnetic tunnel junction element in... | 08/27/2002 |
| 6396735 | Magnetic memory element, magnetic memory and manufacturing method of magnetic memory In a magnetic memory of the present invention which includes a magnetic memory element composed of at least a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer stacked, a third ferromagnetic layer is provided via at least on... | 05/28/2002 |
| 5402292 | Magnetoresistance effect type thin film magnetic head using high coercion films A magnetoresistance effect type thin film magnetic head includes a MR element having the electrical resistance changed according to a change in an applied signal magnetic field, a lead electrode for detecting a voltage change generated across the ends of ... | 03/28/1995 |
