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Inventor: Ronald R. Bowman


Address: Chandler, AZ
No. of patents: 1
Last patent issue date: 04/24/2012

NumberTitleIssue Date
8163624Discrete semiconductor device and method of forming sealed trench junction termination
A discrete semiconductor device has a substrate with a first conductivity type of semiconductor material. A first semiconductor layer is formed over the substrate. The first semiconductor layer having the first conductivity type of semiconductor material. A second s...
04/24/2012
 
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