Inventor: Robert S. K. Chau

Address: Beaverton, OR
No. of patents: 3
Last patent issue date: 12/21/2004

Number	Title	Issue Date
RE38674	Process for forming a thin oxide layer A novel process for forming a robust, sub-100 Å oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry oxidation is...	12/21/2004
5891809	Manufacturable dielectric formed using multiple oxidation and anneal steps A method of forming a thin, robust nitrided oxide layer. The process results in a manufacturable, uniform, low-defect density, reliable nitrided oxide that may be used as a gate dielectric, as a portion of a spacer, or as a portion of a trench isolation. ...	04/06/1999
5244843	Process for forming a thin oxide layer A novel process for forming a robust, sub-100 Å oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry ox...	09/14/1993

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