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| Number | Title | Issue Date |
| RE38674 | Process for forming a thin oxide layer A novel process for forming a robust, sub-100 Å oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry oxidation is... | 12/21/2004 |
| 5891809 | Manufacturable dielectric formed using multiple oxidation and anneal steps A method of forming a thin, robust nitrided oxide layer. The process results in a manufacturable, uniform, low-defect density, reliable nitrided oxide that may be used as a gate dielectric, as a portion of a spacer, or as a portion of a trench isolation. ... | 04/06/1999 |
| 5244843 | Process for forming a thin oxide layer A novel process for forming a robust, sub-100 Å oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry ox... | 09/14/1993 |