Inventor: Richard K. Williams

Address: Cupertino, CA
No. of patents: 208
Last patent issue date: 01/08/2013

Number	Title	Issue Date
8350546	High voltage SEPIC converter A SEPIC converter with over-voltage protection includes a high-side inductor that connects a node Vw to a node Vx. The node Vx is connected, in turn to ground by a power MOSFET. The node Vx is also connected to a node V	01/08/2013
8310218	Time-multiplexed-capacitor DC/DC converter with multiple outputs A multiple output DC-to-DC voltage converter using a new time-multiplexed-capacitor converter algorithm and related circuit topologies is herein disclosed. One embodiment of this invention includes a flying capacitor, a first output node, a second output node, and a...	11/13/2012
8278887	Method of starting DC/DC converter using synchronous freewheeling MOSFET A DC/DC converter including an inductor and a capacitor is started by connecting an input voltage to the inductor and shunting a current around the inductor so as to pre-charge the capacitor to a predetermined voltage. ...	10/02/2012
8258575	Isolated drain-centric lateral MOSFET A lateral MOSFET formed in a substrate of a first conductivity type includes a gate formed atop a gate dielectric layer over a surface of the substrate, a drain region of a second conductivity type, a source region of a second conductivity type, and a body region of...	09/04/2012
8138570	Isolated junction field-effect transistor An isolation structure for a semiconductor device comprises a floor isolation region, a dielectric filled trench above the floor isolation region and a sidewall isolation region extending downward from the bottom of the trench to the floor isolation region. This str...	03/20/2012
8097522	Modular methods of forming isolation structures for integrated circuits A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be ...	01/17/2012
8089129	Isolated CMOS transistors Isolated CMOS transistors formed in a P-type semiconductor substrate include an N-type submerged floor isolation region and a filled trench extending downward from the surface of the substrate to the floor isolation region. Together the floor isolation region and th...	01/03/2012
8071462	Isolation structures for integrated circuits and modular methods of forming the same A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be ...	12/06/2011
8035364	Step-down switching regulator with freewheeling diode A freewheeling DC/DC step-down converter includes a high-side MOSFET, an inductor and an output capacitor connected between the input voltage and ground. A freewheeling clamp, which includes a freewheeling MOSFET and diode, is connected across the inductor. When the...	10/11/2011
8030731	Isolated rectifier diode An isolated diode comprises a floor isolation region, a dielectric-filled trench and a sidewall region extending from a bottom of the trench at least to the floor isolation region. The floor isolation region, dielectric-filled trench and a sidewall region are compri...	10/04/2011
8030152	Method of fabricating trench-constrained isolation diffusion for semiconductor devices A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices ...	10/04/2011
7994827	MOSFET gate drive with reduced power loss A gate driver for a power MOSFET in, for example, a DC-DC converter switches the MOSFET between a fully-on condition and a low-current condition instead of switching the MOSFET between fully-on and fully-off conditions. The amount of charge that must be transferred ...	08/09/2011
7994605	Isolation structure for semiconductor integrated circuit substrate Isolation regions for semiconductor substrates include dielectric-filled trenches and field oxide regions. Protective caps of dielectric materials dissimilar from the dielectric materials in the main portions of the trenches and field oxide regions may be used to pr...	08/09/2011
7994578	ESD protection for bipolar-CMOS-DMOS integrated circuit devices An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form of a MOS or bipolar transistor or a diode. The isolation structure may include a deep implanted floor layer...	08/09/2011
7977926	Boost and up-down switching regulator with synchronous freewheeling MOSFET A freewheeling MOSFET is connected in parallel with the inductor in a switched DC/DC converter. When the freewheeling MOSFET is turned on during the switching operation of the converter, while the low-side and energy transfer MOSFETs are turned off, the inductor cur...	07/12/2011
7977927	Step-up DC/DC voltage converter with improved transient current capability A DC/DC voltage converter includes an inductive switching voltage regulator and a capacitive charge pump connected in series between the input and output terminals of the converter. The charge pump has a second input terminal connected to the input terminal of the c...	07/12/2011
7960997	Cascode current sensor for discrete power semiconductor devices A cascode current sensor includes a main MOSFET and a sense MOSFET. The drain terminal of the main MOSFET is connected to a power device whose current is to be monitored, and the source and gate terminals of the main MOSFET are connected to the source and gate termi...	06/14/2011
7956391	Isolated junction field-effect transistor Various integrated circuit devices, in particular a junction field-effect transistor (JFET), are formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The ...	06/07/2011
7956437	Isolation structures for integrated circuits A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be ...	06/07/2011
7955947	Method of forming isolation structure for semiconductor integrated circuit substrate Isolation regions for semiconductor substrates include dielectric-filled trenches and field oxide regions. Protective caps of dielectric materials dissimilar from the dielectric materials in the main portions of the trenches and field oxide regions may be used to pr...	06/07/2011
7939420	Processes for forming isolation structures for integrated circuit devices Processes for forming isolation structures for semiconductor devices include forming a submerged floor isolation region and a filed trench which together enclose an isolated pocket of the substrate. One process aligns the trench to the floor isolation region. In ano...	05/10/2011
7923821	Semiconductor integrated circuit substrate containing isolation structures Isolation regions for semiconductor substrates include dielectric-filled trenches and field oxide regions. Protective caps of dielectric materials dissimilar from the dielectric materials in the main portions of the trenches and field oxide regions may be used to pr...	04/12/2011
7915137	Method of forming isolation structure for semiconductor integrated circuit substrate Isolation regions for semiconductor substrates include dielectric-filled trenches and field oxide regions. Protective caps of dielectric materials dissimilar from the dielectric materials in the main portions of the trenches and field oxide regions may be used to pr...	03/29/2011
7902630	Isolated bipolar transistor An isolated bipolar transistor formed in a P-type semiconductor substrate includes an N-type submerged floor isolation region and a filled trench extending downward from the surface of the substrate to the floor isolation region. Together the floor isolation region ...	03/08/2011
7898060	Isolation structures for integrated circuits A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be ...	03/01/2011
7868414	Isolated bipolar transistor A bipolar transistor is formed in an isolation structure comprising a floor isolation region, a dielectric filled trench above the floor isolation region and a sidewall isolation region extending downward from the bottom of the trench to the floor isolation region. ...	01/11/2011
7834421	Isolated diode Various integrated circuit devices, in particular a diode, are formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielec...	11/16/2010
7834416	Trench-constrained isolation diffusion for integrated circuit die A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices ...	11/16/2010
7825488	Isolation structures for integrated circuits and modular methods of forming the same A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be ...	11/02/2010
7812647	MOSFET gate drive with reduced power loss A gate driver for a power MOSFET in, for example, a DC-DC converter switches the MOSFET between a fully-on condition and a low-current condition instead of switching the MOSFET between fully-on and fully-off conditions. The amount of charge that must be transferred ...	10/12/2010
7812393	High-voltage extended drain MOSFET All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS...	10/12/2010
7812403	Isolation structures for integrated circuit devices An isolated CMOS pair of transistors formed in a P-type semiconductor substrate includes an N-type submerged floor isolation region and a filled trench extending downward from the surface of the substrate to the floor isolation region. Together the floor isolation r...	10/12/2010
7812579	High-efficiency DC/DC voltage converter including capacitive switching pre-converter and up inductive switching post-regulator A DC/DC converter includes a pre-converter stage, which may include a charge pump, and a post-regulator stage, which may include a boost converter. The duty factor of the post-regulator stage is controlled by a feedback path that extends from the output terminal of ...	10/12/2010
7800198	Isolation structures for integrated circuits A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be ...	09/21/2010
7795681	Isolated lateral MOSFET in epi-less substrate A lateral MOSFET formed in a substrate of a first conductivity type includes a gate formed atop a gate dielectric layer over a surface of the substrate, a drain region of a second conductivity type, a source region of a second conductivity type, and a body region of...	09/14/2010
7786712	High-efficiency DC/DC voltage converter including up inductive switching pre-regulator and capacitive switching post-converter A DC/DC converter includes a pre-regulator stage, which may include a boost converter, and a post-converter stage, which may include a charge pump. The duty factor of the pre-regulator stage is controlled by a feedback path that extends from the output terminal of t...	08/31/2010
7782027	High-efficiency DC/DC voltage converter including down inductive switching pre-regulator and capacitive switching post-converter A DC/DC converter includes a pre-regulator stage, which may include a Buck converter, and a post-converter stage, which may include a charge pump. The duty factor of the pre-regulator stage is controlled by a feedback path that extends from the output terminal of th...	08/24/2010
7777459	High-efficiency DC/DC voltage converter including capacitive switching pre-converter and down inductive switching post-regulator A DC/DC converter includes a pre-converter stage, which may include a charge pump, and a post-regulator stage, which may include a Buck converter. The duty factor of the post-regulator stage is controlled by a feedback path that extends from the output terminal of t...	08/17/2010
7745883	Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each o...	06/29/2010
7746042	Low-noise DC/DC converter with controlled diode conduction The synchronous rectifier MOSFET in a Buck or boost DC/DC converter is operated as a current source rather than being turned off, thereby reducing undesirable losses in efficiency, the generation of unwanted electrical and radiated noise, and numerous other potentia...	06/29/2010

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Inventor: Richard K. Williams