Did You Know...
...When G.G. Hubbard learned of his future son-in-law's invention, he called it "only a toy." His daughter was engaged to a young man named Alexander Graham Bell.
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| Number | Title | Issue Date |
| 7957447 | VCSEL array device and method for manufacturing the VCSEL array device Provided is a VCSEL array device that includes at least a first multilayer reflective film, an active layer, and a second multilayer reflective film, formed on a substrate that extends in a longitudinal direction. Plural mesa portions are formed on the substrate by ... | 06/07/2011 |
| 7672352 | Surface-emitting semiconductor array device, module, light source device, data processing apparatus, light transmitting device, light spatial transmitting apparatus, and light spatial transmitting system A surface-emitting semiconductor array device includes a substrate, a plurality of light-emitting portions, an electrode pad portion formed on the substrate and disposed through the plurality of light-emitting portions and a dividing groove, and having a plurality o... | 03/02/2010 |
| 7496123 | VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first e... | 02/24/2009 |
| 7346089 | Surface-emitting laser diode with tunnel junction and fabrication method thereof A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in se... | 03/18/2008 |
| 7336688 | Surface emitting semiconductor laser and method of manufacturing the same A surface emitting semiconductor laser includes a substrate, a first semiconductor multiple layer reflecting mirror formed on the substrate, the reflecting mirror having a semiconductor layer including at least Ga, In and P, an active region formed on the first semi... | 02/26/2008 |
| 7058104 | Surface emitting semiconductor laser and method of fabricating the same A surface emitting semiconductor laser includes a substrate, a laser portion having a first post construction that is provided on the substrate and has a contact region on a top surface thereof, and an electrode portion having a second post construction provided on ... | 06/06/2006 |
| 6816527 | Surface emitting semiconductor laser A surface emitting semiconductor laser includes a substrate on which a resonator is formed, the resonator including a lower reflection mirror, an active region, and an upper reflection mirror, a metal layer that is provided on the upper reflection mirror and has a f... | 11/09/2004 |
| 5648295 | Method of making a semiconductor laser device A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is ... | 07/15/1997 |
| 5588016 | Semiconductor laser device A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is ... | 12/24/1996 |
| 5563901 | Semiconductor laser array In a semiconductor laser array in which a semiconductor laser element having a horizontal-direction cavity, and plural outer inclined reflecting mirrors capable of reflecting laser light projected from the semiconductor laser element along a specific dire... | 10/08/1996 |
| 5491709 | Semiconductor laser device In a semiconductor laser device according to the invention, a clad layer includes first clad layers, each of which has a greater band gap than an active layer and has a thickness of 0.003 to 0.3 μm, and second clad layers each of which has a lower refrac... | 02/13/1996 |
| 5394425 | Method of manufacturing a semiconductor laser device The method applies to manufacture of a semiconductor laser device which comprises a semiconductor substrate and a plurality of semiconductor layers piled sequentially one on top of another on the semiconductor substrate, the semiconductor layers including... | 02/28/1995 |
| 5253265 | Semiconductor laser device A semiconductor laser device having an active layer which is comprised of a quantum well layer formed of a mixed crystal material, and barrier layers provided on both sides of the quantum well layer in such a manner as to sandwich the same, is characteriz... | 10/12/1993 |
