Did You Know...
...that the first rickshaw was invented in 1869 by an American Baptist minister, the Rev. E. Jonathan Scobie, to transport his invalid wife around the streets of Yokohama?
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7645712 | Method of forming contact A substrate having at least two metal oxide semiconductor devices of a same conductive type and a gap formed between the two devices is provided. A first stress layer is formed over the substrate to cover the metal-oxide semiconductor devices and the substrate, fill... | 01/12/2010 |
| 7585790 | Method for forming semiconductor device A method of forming a semiconductor device. The method comprises steps of providing a substrate having a first transistor, a second transistor and non-salicide device formed thereon and the conductive type of the first transistor is different from that of the second... | 09/08/2009 |
| 7566668 | Method of forming contact A method of forming a contact is provided. A substrate having at least two metal oxide semiconductor devices is provided and a gap is formed between the two devices. A first stress layer is formed over the substrate to cover the metal-oxide semiconductor devices and... | 07/28/2009 |
| 7544603 | Method of fabricating silicon nitride layer and method of fabricating semiconductor device A method of fabricating a silicon nitride layer is described. First, a substrate is provided. Then, a silicon nitride layer is formed on the substrate. The silicon nitride layer is UV-cured in an atmosphere lower than the standard atmospheric pressure. Through the U... | 06/09/2009 |
| 7485515 | Method of manufacturing metal oxide semiconductor A method of forming compressive nitride film is provided. The method includes performing a chemical vapor deposition (CVD) process to form a nitride film on a substrate, and the method is characterized by adding a certain gas, selected from among Ar, N2, ... | 02/03/2009 |
| 7332447 | Method of forming a contact A method of forming a contact is provided. A substrate having at least two metal oxide semiconductor devices is provided and a gap is formed between the two devices. A first stress layer is formed over the substrate to cover the metal-oxide semiconductor devices and... | 02/19/2008 |
| 7294572 | Method of forming contact A method of forming a contact is provided. A substrate having at least two conductive devices is provided. A spacing is located between the two conductive devices. A first dielectric layer is formed over the substrate to cover the two conductive devices and the spac... | 11/13/2007 |
| 6989337 | Silicon oxide gap-filling process A silicon oxide gap-filling process is described, wherein a CVD process having an etching effect is performed to fill up a trench with silicon oxide. The reaction gases used in the CVD process include deposition gases and He/H2 mixed gas as a sputtering-e... | 01/24/2006 |
| 6913978 | Method for forming shallow trench isolation structure A method of fabricating a shallow trench isolation structure is disclosed. On a substrate, a pad oxide layer and a mask layer are successively formed. The pad oxide layer, the mask layer and a portion of the substrate are patterned to form a trench. After performing... | 07/05/2005 |
| 6891244 | Plug structure having low contact resistance and method of manufacturing A manufacturing method of a plug structure having low contact resistance includes the following steps. First, a silicon substrate and a BPSG layer covering thereon are provided. The silicon substrate has a dopant area. Next, the BPSG layer is etched to form a contac... | 05/10/2005 |
