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Inventor: Naoto Kurosawa


Address: Kanagawa, JP
No. of patents: 3
Last patent issue date: 11/16/2010

NumberTitleIssue Date
7834461Semiconductor apparatus
A semiconductor apparatus includes a semiconductor device formed to a first surface of a semiconductor substrate, a blocking film provided in a first via-hole, the first via-hole formed with a concave shape to the first surface of the semiconductor substrate, a firs...
11/16/2010
7741700Transistor with heat dissipating means
A semiconductor device having sufficiently high heat dissipation performance while inhibiting an increase in the area of a chip is provided. In semiconductor device 1, a plurality of HBTs 20 and a plurality of diodes 30 are one-dimensionally and...
06/22/2010
7038244Semiconductor device and method of manufacturing the same
A semiconductor device includes a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer, which are sequentially laminated on a substrate. It also includes an emitter electrode, a base electrode, and a collector electrode, w...
05/02/2006
 
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