Inventor: Naoto Inoue

Address: Tokyo, JP
No. of patents: 2
Last patent issue date: 12/11/2001

Number	Title	Issue Date
6329274	Method of producing semiconductor device For forming electrical interlayer contact in a semiconductor device, an insulating film is formed on a first electrically conductive layer and then a contact hole is formed in the insulating film to expose a part of the first electroconductive, an activat...	12/11/2001
5250827	Semiconductor integrated circuit having a DRAM cell unit and a nonvolatile cell unit A high density nonvolatilized semiconductor integrated circuit is comprised of a Dynamic RAM (DRAM) cell unit and a nonvolatile cell unit. The DRAM cell unit is comprised of a first transistor having its gate connected to a word line, its source connected...	10/05/1993

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