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| Number | Title | Issue Date |
| 4973454 | LEC method and apparatus for growing a single crystal of compound semiconductors If the distribution coefficient of an impurity in a compound melt is less than 1, the impurity concentration in the compound melt doped with the impurity increased during a crystal growth in an LEC method. A supplying device replenishes an undoped crystal... | 11/27/1990 |
| 4911780 | LEC method for growing a single crystal of compound semiconductors If the distribution coefficient of an impurity in a compound melt is less than 1, the impurity concentration in the compound melt doped with the impurity increased during a crystal growth in an LEC method. A supplying device replenishes an undoped crystal... | 03/27/1990 |
| 4783235 | Method for growing a single crystal of compound semiconductor An improvement of LEC methods. Highly impurity doped single crystal often suffers from impurity precipitation. The cause of the occurrence of impurity precipitation is supposed to be the supercooling. To avoid the occurrence of supercooling the pulling sp... | 11/08/1988 |
| 4670176 | Single crystal of compound semiconductor of groups III-V with low dislocation density More than two impurities are doped in a host crystal of compound semiconductors. One of the impurities is an anisoelectronic impurity. One or more than one impurities are isoelectronic impurities. The anisoelectronic impurity determines the electronic pro... | 06/02/1987 |
| 4584174 | Single crystal of compound semiconductor of groups III-V with low dislocation density More than two isoelectronic impurities are doped in a host crystal of compound semiconductors of groups III-V. An impurity atom forms a covalent bond with a host atom. Although the real bond length "A" between an impurity and a host atom in the crystal cannot ... | 04/22/1986 |
