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Inventor: Megumi Takeuchi


Address: Tokyo, JP
No. of patents: 4
Last patent issue date: 08/24/2010

NumberTitleIssue Date
7781125Lithography mask blank
A lithography mask blank used as a material for producing a lithography mask includes at least one thin film which is formed on a substrate and has a desired function. The blank has a nitrogen-containing thin film as the above-mentioned thin film and an ammonium ion...
08/24/2010
6335124Phase shift mask and phase shift mask blank
The method of manufacturing a halftone phase shift mask blank enables the accurate and easy control over the composition of an MSi semitransparent film that makes it easy to obtain an MSi semitransparent film having a desired specific component, the forma...
01/01/2002
6087047Phase shift mask and phase shift mask blank
In a half-tone type phase shift mask blank in which a semi-transparent film is formed on a transparent substrate, and the semi-transparent film serves to shift phase of a first optical light beam which transmits the semi-transparent film for a second opti...
07/11/2000
5955178Electro-conductive oxides and electrodes using the same
Electro-conductive oxides showing excellent electro-conductivity, electrodes using the electro-conductive oxide and methods for manufacturing the same are described. The electro-conductive oxides are represented by the general formula: M(1)x M(...
09/21/1999
 
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