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Actor Marlon Brando has four patents, all named "Drumhead tensioning device and method."
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| Number | Title | Issue Date |
| 6762437 | Light emitting semiconductor device A light emitting semiconductor device comprises an upper cladding layer (106) consisting of a first upper cladding layer (106a) provided on an active layer (105) and a second upper cladding layer (106b) provided on the first... | 07/13/2004 |
| 6563138 | Low-cost, high-density light-emitting-diode array and fabrication method thereof A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely throu... | 05/13/2003 |
| 6407410 | Semiconductor optical device A light emitting diode in accordance with the present invention has a p-n junction which is formed by selectively implanting an impurity from the surface of a semiconductor substrate, and also has an etched groove which is formed in the p-n junction area ... | 06/18/2002 |
| 6388696 | Led array, and led printer head According to the present invention, a plurality of p-type semiconductor layers 13 are formed in a single row and a first layer insulating film 12 having first opening portions 16a and an n-side opening portion 17 is formed on the layers in an n-type semic... | 05/14/2002 |
| 6384429 | Light-emitting semiconductor device with reduced obstructions to light emission In one aspect of the invention, a light-emitting semiconductor device has a light-emitting layer with a certain bandgap energy, an upper cladding layer with a higher bandgap energy, a first diffusion area extending into the light-emitting layer, a second ... | 05/07/2002 |
| 6313483 | Light-emitting semiconductor device with reduced nonradiative recombination A light-emitting semiconductor device has a semi-insulating semiconductor surface layer overlying a conductive semiconductor layer of a first conductive type. A diffusion region of a second conductive type extends through the semi-insulating semiconductor... | 11/06/2001 |
| 6271051 | Light-emitting diode, light-emitting diode array, and method of their fabrication A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a larg... | 08/07/2001 |
| 6222208 | Light-emitting diode and light-emitting diode array A light-emitting diode includes a first semiconductor epitaxial layer of a first conduction type, a second semiconductor epitaxial layer of the first conduction type laminated upon the first semiconductor epitaxial layer and having an energy band gap grea... | 04/24/2001 |
| 6211537 | LED array A 1200 dpi LED may be manufactured without highly accurate mask alignment and provide good light radiation efficiency. A first interlayer dielectric is formed on a semiconductor substrate and has a plurality of first windows formed therein and aligned in ... | 04/03/2001 |
| 6190935 | Low-cost, high-density light-emitting-diode array and fabrication method thereof A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely throu... | 02/20/2001 |
| 6180961 | Light emitting semiconductor device with stacked structure A high-density semiconductor device and semiconductor device array exhibiting high light emission efficiency which can be mass-produced at low cost with high yield is provided. An LED array comprises a structure wherein an n-type GaAs buffer layer 102 is ... | 01/30/2001 |
| 6172701 | Light emitting element array chip, light emitting element array drive IC and print head To achieve a reduction in the size of the print head and a reduction in the cost, LED array chips 1 achieved by matrix-connecting M×N LED elements 2 with M pad electrodes to be scanned 4 and N pad electrodes to be driven 3 and LED array drive ICs 10 are ... | 01/09/2001 |
| 6144043 | Light emitting semiconductor device having plural light emitting elements with different junction depth A light emitting semiconductor device in which LEDs for emitting light different in wavelength from one another are densely integrated. First to fifth semiconductor layers are AlGaAs layers being different in Al composition ratio, and when it is assumed t... | 11/07/2000 |
| 6136627 | High-resolution light-sensing and light-emitting diode array and fabrication method thereof A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 μm but not more than 2 μm in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or ... | 10/24/2000 |
| 6133588 | Light-emitting element array and fabrication method with separate light-emitting and current-conducting diffusion areas A light-emitting element is formed in a semiconductor substrate having a semi-insulating upper layer and a conductive lower layer. An impurity is diffused into both layers, forming a light-emitting area by creating a pn junction in the lower layer. An add... | 10/17/2000 |
| 6064418 | Led array, print head, and electrophotographic printer In an array of light-emitting diodes formed by diffusion of an impurity into a semiconductor substrate, the width of the diodes in the array direction is between four-tenths and five-tenths of the array pitch. The width of the windows above the diodes is ... | 05/16/2000 |
| 6063644 | Light-emitting element and array with etched surface, and fabrication method thereof A light-emitting element, or array of light-emitting elements, is formed by diffusion of an impurity into a semiconductor substrate, creating a light-emitting region. Following the diffusion, the surface zone of the light-emitting region, which includes c... | 05/16/2000 |
| 6054724 | Light-emitting diode, light-emitting diode array A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a larg... | 04/25/2000 |
| 6054726 | Light-emitting semiconductor device with planar structure A light-emitting semiconductor device has a planar structure including two multilayer reflecting layers, two cladding layers, and an active layer of a first conductive type. The cladding layers have bandgap energies exceeding the bandgap energy of the act... | 04/25/2000 |
| 5997152 | Light emitting element module and printer head using the same A light emitting element module is provided including a board and plural chips arranged in the form of an array on the board. Each chip includes at least one light emitting element having a light emitting function and/or a photosensing function. The chips... | 12/07/1999 |
| 5972729 | Method of manufacturing light-receiving/emitting diode array chip A method of manufacturing a light-emitting or a light-receiving diode array chip. A first interlayer dielectric is formed in each of a plurality of chip areas on a substrate of a first conductivity type. Impurity diffusion regions of a second conductivity... | 10/26/1999 |
| 5955747 | High-density light-emitting-diode array utilizing a plurality of isolation channels A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely throu... | 09/21/1999 |
| 5955748 | End face light emitting type light emitting diode An end facet light emitting type LED has a slanted light emitting side wall relative to a substrate surface. A method for manufacturing end facet light emitting type light emitting devices prevents the pn-junction regions of the devices from being damaged... | 09/21/1999 |
| 5917227 | Light-emitting-diode array and light-emitting-diode element A light-emitting-diode array includes a non-doped compound semiconductor layer between a substrate and a first compound semiconductor layer. A plurality of isolation regions extend from the first compound semiconductor layer to the surface of the non-dope... | 06/29/1999 |
| 5869221 | Method of fabricating an LED array A method of fabricating an LED array includes forming a first insulating film composed of aluminum oxide on a semiconductor substrate of a first conductive type; patterning the first insulating film by photolithography to form a plurality of first windows... | 02/09/1999 |
| 5821567 | High-resolution light-sensing and light-emitting diode array A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 μm but not more than 2 μm in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or ... | 10/13/1998 |
| 5733689 | Led array fabrication process with improved unformity A method of fabricating an LED array includes (a) forming a first insulating film composed of aluminum oxide on a semiconductor substrate of a first conductive type; (b) patterning the first insulating film by photolithography to form a plurality of first... | 03/31/1998 |
| 5700714 | Diffusion mask and fabrication method for forming pn-junction elements in a compound semiconductor substrate A pn-junction element is formed in a compound semiconductor substrate by depositing an aluminum-nitride film on the surface of the substrate, patterning the aluminum-nitride film to form a diffusion mask, depositing a diffusion source film on the diffusio... | 12/23/1997 |
| 5600157 | Light-emitting and light-sensing diode array device, and light-emitting and light-sensing diode with improved sensitivity According to a first aspect of the invention, a light-emitting and light-sensing diode has a doped region with a depth not exceeding 2 μm, for adequate sensitivity, and an impurity concentration of at least 5×1020 atoms/cm-3, for a... | 02/04/1997 |
| 5530268 | Light-emitting diode array with anti-reflection coating providing reduced internal reflection An LED array is fabricated by forming an insulating film on a semiconductor substrate of a first conductive type, forming a plurality of windows in the insulating film, and diffusing an impurity of a second conductive type through these windows to create ... | 06/25/1996 |
| 5523590 | LED array with insulating films An LED array, including a semiconductor substrate of a first conductive type; a first insulating film formed on the substrate, comprising aluminum oxide and having a plurality of first windows; a second insulating film formed on the first insulating film,... | 06/04/1996 |