|6599809||Method of manufacturing semiconductor device having a marking recess|
A semiconductor device capable of preventing yield reduction and a method of manufacturing the same can be obtained. The method of manufacturing a semiconductor device including an element formation region arranged on a semiconductor substrate and an exte...
|6319812||Method of manufacturing a semiconductor device|
Sintering is effected a gate insulating film of a transistor in a hydrogen atmosphere at a temperature from 450° C. to 600° C. only before formation of an interconnection layer such as an aluminum interconnection layer which is less resistant to heat tr...
|5729035||Non-volatile semiconductor device with multi-layered capacitor insulating film|
A structure and a manufacturing method of a semiconductor device which prevents leakage of electric charges from a floating gate electrode to outside. The semiconductor device includes a capacitor insulating film at an upper surface and opposing sidewall ...