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| Number | Title | Issue Date |
| 6599809 | Method of manufacturing semiconductor device having a marking recess A semiconductor device capable of preventing yield reduction and a method of manufacturing the same can be obtained. The method of manufacturing a semiconductor device including an element formation region arranged on a semiconductor substrate and an exte... | 07/29/2003 |
| 6319812 | Method of manufacturing a semiconductor device Sintering is effected a gate insulating film of a transistor in a hydrogen atmosphere at a temperature from 450° C. to 600° C. only before formation of an interconnection layer such as an aluminum interconnection layer which is less resistant to heat tr... | 11/20/2001 |
| 5729035 | Non-volatile semiconductor device with multi-layered capacitor insulating film A structure and a manufacturing method of a semiconductor device which prevents leakage of electric charges from a floating gate electrode to outside. The semiconductor device includes a capacitor insulating film at an upper surface and opposing sidewall ... | 03/17/1998 |
