|4033291||Apparatus for liquid-phase epitaxial growth|
An apparatus for liquid-phase epitaxial growth is characterized in that the greater part of that surface of a well, made of carbon, which contacts with a solution for liquid-phase epitaxial growth is covered with a fused quartz layer....
|3951699||Method of manufacturing a gallium phosphide red-emitting device|
A method of manufacturing a gallium phosphide (GaP) red-emitting device by forming at least one n-type GaP layer on an n-type GaP substrate by the liquid phase epitaxial growth process and further depositing a p-type GaP layer on said n-type GaP layer, th...
|3934260||Red light-emitting gallium phosphide device|
A red light-emitting gallium phosphide device provided with a p-n junction contributing to the emission of light, wherein the maximum concentration of an oxygen donor in a depletion layer surrounding the p-n junction ranges from 1 × 1012 cm