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| Number | Title | Issue Date |
| 7615438 | Lanthanide yttrium aluminum oxide dielectric films Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The lanthanide yttrium aluminum oxide film may be structured as one or more mo... | 11/10/2009 |
| 7613031 | System, apparatus, and method to increase read and write stability of scaled SRAM memory cells Circuits, systems, and methods are disclosed for SRAM memories. An SRAM includes memory cells wherein read stability and write stability can be modified by adjusting a well bias signal operably coupled to an N-well of the memory cell. The well bias signal is generat... | 11/03/2009 |
| 7611959 | Zr-Sn-Ti-O films A dielectric layer containing a Zr—Sn—Ti—O film and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. In an embodiment, forming the Zr—Sn—... | 11/03/2009 |
| 7608876 | Merged MOS-bipolar capacitor memory cell A high density vertical merged MOS-bipolar-capacitor gain cell is realized for DRAM operation. The gain cell includes a vertical MOS transistor having a source region, a drain region, and a floating body region therebetween. The gain cell includes a vertical bi-pola... | 10/27/2009 |
| 7605030 | Hafnium tantalum oxynitride high-k dielectric and metal gates Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may be structured as one or more monolayers. The hafnium tantalum oxynitride film may be f... | 10/20/2009 |
| 7606448 | Zinc oxide diodes for optical interconnections The present disclosure includes methods, devices, and systems for zinc oxide diodes for optical interconnections. One system includes a ZnO emitter confined within a circular geometry in an oxide layer on a silicon substrate. An optical waveguide is formed in the ox... | 10/20/2009 |
| 7605650 | Switched capacitor amplifier with higher gain and improved closed-loop gain accuracy A switched capacitor CMOS amplifier uses a first stage non-inverting CMOS amplifier driving a second stage inverting CMOS amplifier. The first stage amplifier is provided with positive feedback to substantially increase the gain of the first stage amplifier. In the ... | 10/20/2009 |
| 7601649 | Zirconium-doped tantalum oxide films A dielectric film containing zirconium-doped tantalum oxide arranged as a structure of one or more monolayers and a method of fabricating such a dielectric film produce a reliable dielectric layer for use in a variety of electronic devices. In an embodiment, a zirco... | 10/13/2009 |
| 7602009 | Erasable non-volatile memory device using hole trapping in high-K dielectrics A non-volatile memory is described having memory cells with a gate dielectric. The gate dielectric is a multilayer charge trapping dielectric between a control gate and a channel region of a transistor to trap positively charged holes. The multilayer charge trapping... | 10/13/2009 |
| 7602030 | Hafnium tantalum oxide dielectrics A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments include structures for capacitors, transistors, memory devices, and ele... | 10/13/2009 |
| 7602049 | Capacitive techniques to reduce noise in high speed interconnections Improved methods and structures are provided using capacitive techniques to reduce noise in high speed interconnections, such as in CMOS integrated circuits. Embodiments of an electronic device having a transmission line circuit include a first layer of electrically... | 10/13/2009 |
| 7601593 | Flash memory with metal-insulator-metal tunneling program and erase The flash memory cell comprises a sense transistor that has a pair of source/drain lines and a control gate. A coupling metal-insulator-metal capacitor is created between the control gate and a read wordline. A tunneling metal-insulator-metal capacitor is created be... | 10/13/2009 |
| 7601595 | Surround gate access transistors with grown ultra-thin bodies A vertical transistor having an annular transistor body surrounding a vertical pillar, which can be made from oxide. The transistor body can be grown by a solid phase epitaxial growth process to avoid difficulties with forming sub-lithographic structures via etching... | 10/13/2009 |
| 7592251 | Hafnium tantalum titanium oxide films Embodiments of a dielectric layer containing a hafnium tantalum titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of methods of fabricating such a dielectric layer provide a dielectri... | 09/22/2009 |
| 7588988 | Method of forming apparatus having oxide films formed using atomic layer deposition A dielectric layer containing an atomic layer deposited insulating metal oxide film having multiple metal components and a method of fabricating such a dielectric layer produce a reliable dielectric layer for use in a variety of electronic devices. Embodiments inclu... | 09/15/2009 |
| 7586144 | Memory device with high dielectric constant gate dielectrics and metal floating gates A memory cell transistor includes a high dielectric constant tunnel insulator, a metal floating gate, and a high dielectric constant inter-gate insulator comprising a metal oxide formed over a substrate. The tunnel insulator and inter-gate insulator have dielectric ... | 09/08/2009 |
| 7586329 | Capacitively-coupled level restore circuits for low voltage swing logic circuits Some embodiments of the disclosure include a circuit having differential sides and a capacitive network coupled to differential sides. The circuit further includes a reset network for resetting the first differential side to a first voltage and for resetting the sec... | 09/08/2009 |
| 7582549 | Atomic layer deposited barium strontium titanium oxide films Apparatus and methods of forming the apparatus include a dielectric layer containing barium strontium titanium oxide layer, an erbium-doped barium strontium titanium oxide layer, or a combination thereof. Embodiments of methods of fabricating such dielectric layers ... | 09/01/2009 |
| 7582161 | Atomic layer deposited titanium-doped indium oxide films An apparatus and methods of forming the apparatus include a film of transparent conductive titanium-doped indium oxide for use in a variety of configurations and systems. The film of transparent conductive titanium-doped indium oxide may be structured as one or more... | 09/01/2009 |
| 7583534 | Memory utilizing oxide-conductor nanolaminates One floating gate transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A floating gate is separated from the channel region by a first gate oxide. The floating gate includes oxide-conductor nano... | 09/01/2009 |
| 7579240 | Method of making vertical transistor with horizontal gate layers Vertical body transistors with adjacent horizontal gate layers are used to form a memory array in a high density flash electrically erasable and programmable read only memory (EEPROM) or a logic array in a high density field programmable logic array (FPLA). The tran... | 08/25/2009 |
| 7572695 | Hafnium titanium oxide films Embodiments of a dielectric layer containing a hafnium titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of methods of fabricating such a dielectric layer provide a dielectric layer f... | 08/11/2009 |
| 7569876 | DRAM arrays, vertical transistor structures, and methods of forming transistor structures and DRAM arrays The invention includes a method of forming a semiconductor construction. Dopant is implanted into the upper surface of a monocrystalline silicon substrate. The substrate is etched to form a plurality of trenches and cross-trenches which define a plurality of pillars... | 08/04/2009 |
| 7570521 | Low power flash memory devices A buried bipolar junction is provided in a floating gate transistor flash memory device. During a write operation electrons are injected into a surface depletion region of the memory cell transistors. These electrons are accelerated in a vertical electric field and ... | 08/04/2009 |
| 7563730 | Hafnium lanthanide oxynitride films Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide oxynitride film may be structured as one or more monolayers. Metal ele... | 07/21/2009 |
| 7564088 | High-density single transistor vertical memory gain cell A memory cell which is formed on a substrate of a first conductivity type. A pillar of the first conductivity type extends vertically upward from the substrate. A source region of a second conductivity type is formed in the substrate extending adjacent to and away f... | 07/21/2009 |
| 7564082 | Gettering using voids formed by surface transformation One aspect of this disclosure relates to a semiconductor structure, comprising a gettering region proximate to a device region in a semiconductor wafer. The gettering region includes a precisely-determined arrangement of a plurality of precisely-formed voids through... | 07/21/2009 |
| 7564087 | Merged MOS-bipolar capacitor memory cell A high density vertical merged MOS-bipolar-capacitor gain cell is realized for DRAM operation. The gain cell includes a vertical MOS transistor having a source region, a drain region, and a floating body region therebetween. The gain cell includes a vertical bi-pola... | 07/21/2009 |
| 7560395 | Atomic layer deposited hafnium tantalum oxide dielectrics A dielectric layer containing hafnium tantalum film arranged as a structure of one or more monolayers and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. In an embodiment, a hafnium tantalum oxid... | 07/14/2009 |
| 7554829 | Transmission lines for CMOS integrated circuits Improved methods and structures are provided for impedance-controlled low-loss lines in CMOS integrated circuits. The present invention offers a reduction in signal delay. Moreover, the present invention further provides a reduction in skew and crosstalk. Embodiment... | 06/30/2009 |
| 7554161 | HfAlOfilms for gate dielectrics A dielectric film containing HfAlO3 and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer depos... | 06/30/2009 |
| 7550339 | Memory device with high dielectric constant gate dielectrics and metal floating gates A memory cell transistor includes a high dielectric constant tunnel insulator, a metal floating gate, and a high dielectric constant inter-gate insulator comprising a metal oxide formed over a substrate. The tunnel insulator and inter-gate insulator have dielectric ... | 06/23/2009 |
| 7550341 | High density stepped, non-planar flash memory A first plurality of memory cells is in a first plane in a first column of the array. A second plurality of memory cells is in a second plane in the same column. The second plurality of memory cells are coupled to the first plurality of memory cells through a series... | 06/23/2009 |
| 7547954 | Electronic systems using optical waveguide interconnects formed through a semiconductor wafer An integrated circuit with a number of optical waveguides that are formed in high aspect ratio holes. The high aspect ratio holes extend through a semiconductor wafer. The optical waveguides include a highly reflective material that is deposited so as to line an inn... | 06/16/2009 |
| 7544596 | Atomic layer deposition of GdScO3 films as gate dielectrics The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of gadolinium oxide (Gd2O3) and scandium oxide (Sc2O3) acting as a single dielectric layer with a formula of GdScO3, and a method of fab... | 06/09/2009 |
| 7544989 | High density stepped, non-planar flash memory A first plurality of memory cells is in a first plane in a first column of the array. A second plurality of memory cells is in a second plane in the same column. The second plurality of memory cells are coupled to the first plurality of memory cells through a series... | 06/09/2009 |
| 7544584 | Localized compressive strained semiconductor One aspect of the present subject matter relates to a method for forming strained semiconductor film. According to an embodiment of the method, a crystalline semiconductor bridge is formed over a substrate. The bridge has a first portion bonded to the substrate, a s... | 06/09/2009 |
| 7545183 | Integrated circuit comparator or amplifier An integrated circuit comparator comprises a differential amplifier, a source follower circuit coupled to a gate terminal of a first transistor in the differential amplifier, and an output circuit. One or more source follower circuits may be utilized in connection w... | 06/09/2009 |
| 7544604 | Tantalum lanthanide oxynitride films Electronic apparatus and methods of forming the electronic apparatus include a tantalum lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The tantalum lanthanide oxynitride film may be structured as one or more monolayers. Metal e... | 06/09/2009 |
| 7544984 | Gettering using voids formed by surface transformation One aspect of this disclosure relates to a memory device, comprising at least one gettering region, a memory array, a plurality of word lines and bit lines, and control circuitry. The gettering region is formed in a semiconductor substrate. The gettering region incl... | 06/09/2009 |