Inventor: Kie Y. Ahn

Address: Chappaqua, NY
No. of patents: 507
Last patent issue date: 02/14/2012

«First «Previous1 2 3 4 5 6 7 8 9 10 11 Next»Last»

Number	Title	Issue Date
8114763	Tantalum aluminum oxynitride high-K dielectric Electronic apparatus and methods of forming the electronic apparatus may include a tantalum aluminum oxynitride film for use in a variety of electronic systems and devices. The tantalum aluminum oxynitride film may be structured as one or more monolayers. The tantal...	02/14/2012
8102013	Lanthanide doped TiOfilms The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiOX) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and thulium, produces a reliable structure for use in a variety...	01/24/2012
8093666	Lanthanide yttrium aluminum oxide dielectric films Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The lanthanide yttrium aluminum oxide film may be structured as one or more mo...	01/10/2012
8093638	Systems with a gate dielectric having multiple lanthanide oxide layers Electronic systems and methods of forming the electronic systems include a gate dielectric having multiple lanthanide oxide layers. Such electronic systems may be used in a variety of electronic system applications. A dielectric film having a layer of a lanthanide o...	01/10/2012
8084808	Zirconium silicon oxide films Electronic apparatus and systems include structures having a dielectric layer containing a zirconium silicon oxide film. A zirconium silicon oxide film may be disposed in an integrated circuit, as well as in a variety of other electronic devices. Additional apparatu...	12/27/2011
8084370	Hafnium tantalum oxynitride dielectric Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may be structured as one or more monolayers. The hafnium tantalum oxynitride film may be f...	12/27/2011
8076249	Structures containing titanium silicon oxide A dielectric containing a titanium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric provide a dielectric for use in a variety of electronic devices. Embodiments include a dielectric containing a titanium silicon oxid...	12/13/2011
8076727	Magnesium-doped zinc oxide structures and methods Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain zinc and monolayers that contain magnesium are deposited onto a substrate and subsequently processed to form magnesium-doped zinc oxide. The resul...	12/13/2011
8076200	Charge trapping dielectric structures with variable band-gaps A nonvolatile read-only memory having a thin nitrided tunnel insulator surface with a charge blocking insulator over the nitrided surface is presented. The tunnel insulator may be formed of a metal oxide, a metal oxycarbide, a semiconductor oxide, or oxycarbide. The...	12/13/2011
8071476	Cobalt titanium oxide dielectric films Electronic apparatus and methods of forming the electronic apparatus include a cobalt titanium oxide film on a substrate for use in a variety of electronic systems. The cobalt titanium oxide film may be structured as one or more monolayers. The cobalt titanium oxide...	12/06/2011
8071443	Method of forming lutetium and lanthanum dielectric structures Methods of forming dielectric structures are shown. Methods of forming dielectric structures are shown that include lutetium oxide and lanthanum aluminum oxide crystals embedded within the lutetium oxide. Specific methods shown include monolayer deposition which yie...	12/06/2011
8067794	Conductive layers for hafnium silicon oxynitride films Electronic apparatus and methods of forming the electronic apparatus include a HfSiON film on a substrate for use in a variety of electronic systems. The HfSiON film may be structured as one or more monolayers. Electrodes to a dielectric containing a HfSiON may be s...	11/29/2011
8026161	Highly reliable amorphous high-K gate oxide ZrO2 A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Also shown is a gate oxide with a conduction band offset in a range of approximately ...	09/27/2011
8017988	High density stepped, non-planar flash memory A first plurality of memory cells is in a first plane in a first column of the array. A second plurality of memory cells is in a second plane in the same column. The second plurality of memory cells are coupled to the first plurality of memory cells through a series...	09/13/2011
8009006	Open pattern inductor Various embodiments includes a stacked open pattern inductor fabricated above a semiconductor substrate. The stacked open pattern inductor includes a plurality of parallel open conducting patterns embedded in a magnetic oxide or in an insulator and a magnetic materi...	08/30/2011
8003985	Apparatus having a dielectric containing scandium and gadolinium Apparatus having a dielectric containing scandium and gadolinium can provide a reliable structure with a high dielectric constant (high k). In an embodiment, atomic layer deposition (ALD) can be used to form a nanolaminate dielectric of gadolinium oxide (Gd2	08/23/2011
7999334	Hafnium tantalum titanium oxide films Embodiments of a dielectric layer containing a hafnium tantalum titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of methods of fabricating such a dielectric layer provide a dielectri...	08/16/2011
7989362	Hafnium lanthanide oxynitride films Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide oxynitride film may be structured as one or more monolayers. Metal ele...	08/02/2011
7989285	Method of forming a film containing dysprosium oxide and hafnium oxide using atomic layer deposition The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium oxide (HfO2) doped with dysprosium (Dy) and a method of fabricating such a combination gate and dielectric layer produces a reliable structure for use in a variety of electroni...	08/02/2011
7985995	Zr-substituted BaTiOfilms The use of atomic layer deposition (ALD) to form a zirconium substituted layer of barium titanium oxide (BaTiO3), produces a reliable ferroelectric structure for use in a variety of electronic devices such as a dielectric in nonvolatile random access memo...	07/26/2011
7983516	Zinc oxide diodes for optical interconnections The present disclosure includes methods, devices, and systems for zinc oxide diodes for optical interconnections. One system includes a ZnO emitter confined within a circular geometry in an oxide layer on a silicon substrate. An optical waveguide is formed in the ox...	07/19/2011
7972974	Gallium lanthanide oxide films Electronic apparatus and methods of forming the electronic apparatus include a gallium lanthanide oxide film for use in a variety of electronic systems. The gallium lanthanide oxide film may be structured as one or more monolayers. The gallium lanthanide oxide film ...	07/05/2011
7960803	Electronic device having a hafnium nitride and hafnium oxide film The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf3N4) and hafnium oxide (HfO2) and a method of fabricating such a combination gate and dielectric layer produces a reliable structure for use in...	06/14/2011
7927996	Tungsten-doped indium oxide structures and methods Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain tungsten and monolayers that contain indium are deposited onto a substrate and subsequently processed to form tungsten-doped indium oxide. The res...	04/19/2011
7923381	Methods of forming electronic devices containing Zr-Sn-Ti-O films A dielectric film containing Zr—Sn—Ti—O and methods of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Films of Zr—Sn—Ti—O may be formed in a self-...	04/12/2011
7915174	Dielectric stack containing lanthanum and hafnium Dielectric layers containing a dielectric layer including lanthanum and hafnium and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices. ...	03/29/2011
7915712	Structures including passivated germanium A method of passivating germanium that comprises providing a germanium material and carburizing the germanium material to form a germanium carbide material. The germanium carbide material may be formed by microwave plasma-enhanced chemical vapor deposition by exposi...	03/29/2011
7902582	Tantalum lanthanide oxynitride films Electronic apparatus and methods of forming the electronic apparatus include a tantalum lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The tantalum lanthanide oxynitride film may be structured as one or more monolayers. Metal e...	03/08/2011
7892921	Flash memory device having a graded composition, high dielectric constant gate insulator A graded composition, high dielectric constant gate insulator is formed between a substrate and floating gate in a flash memory cell transistor. The gate insulator is comprised of amorphous germanium or a graded composition of germanium carbide and silicon carbide. ...	02/22/2011
7888261	Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in integrated cir...	02/15/2011
7879674	Germanium-silicon-carbide floating gates in memories The use of a germanium carbide (GeC), or a germanium silicon carbide (GeSiC) layer as a floating gate material to replace heavily doped polysilicon (poly) in fabricating floating gates in EEPROM and flash memory results in increased tunneling currents and faster era...	02/01/2011
7875912	ZrHfSnOfilms as high k gate dielectrics The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of zirconium oxide (ZrO2), hafnium oxide (HfO2) and tin oxide (SnO2) acting as a single dielectric layer with a formula of Zrx Hfy Sn	01/25/2011
7869242	Transmission lines for CMOS integrated circuits Improved methods and structures are provided for impedance-controlled low-loss lines in CMOS integrated circuits. The present invention offers a reduction in signal delay. Moreover, the present invention further provides a reduction in skew and crosstalk. Embodiment...	01/11/2011
7867919	Method of fabricating an apparatus having a lanthanum-metal oxide dielectric layer Lanthanum-metal oxide dielectric layers and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices and systems. In an embodiment, a lanthanum aluminum oxide dielectric layer ...	01/11/2011
7863667	Zirconium titanium oxide films Dielectric layers having an atomic layer deposited oxide containing titanium and zirconium and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pul...	01/04/2011
7847344	Memory utilizing oxide-nitride nanolaminates Structures, systems and methods for transistors utilizing oxide-nitride nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel ...	12/07/2010
7833914	Capacitors and methods with praseodymium oxide insulators Methods of forming and the resulting capacitors formed by these methods are shown. Monolayers that contain praseodymium are deposited onto a substrate and subsequently processed to form praseodymium oxide dielectrics. Monolayers that contain titanium or other metals...	11/16/2010
7829979	High permeability layered films to reduce noise in high speed interconnects An apparatus provides a memory having a transmission line circuit with an associated high permeability material. The high permeability material may include a layered structure of a nickel iron compound. ...	11/09/2010
7804144	Low-temperature grown high quality ultra-thin CoTiOgate dielectrics A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate oxides formed from alloys such as cobalt-titanium are thermodynamically stable s...	09/28/2010
7776762	Zirconium-doped tantalum oxide films Dielectric layers containing a zirconium-doped tantalum oxide layer, where the zirconium-doped tantalum oxide layer is formed of one or more monolayers of tantalum oxide doped with zirconium, provide an insulating layer in a variety of structures for use in a wide r...	08/17/2010

«First «Previous1 2 3 4 5 6 7 8 9 10 11 Next»Last»

PatentStorm

Quotables

PatentStorm News

Inventor: Kie Y. Ahn