|7838308||Method of controlling embedded material/gate proximity|
A method that includes forming a gate of a semiconductor device on a substrate and forming a recess for an embedded silicon-straining material in source and drain regions for the gate. In this method, a proximity value, which is defined as a distance between the gat...
|7682845||Methods for calibrating a process for growing an epitaxial silicon film and methods for growing an epitaxial silicon film|
Methods are provided for calibrating a process for growing an epitaxial silicon-comprising film and for growing an epitaxial silicon-comprising film. One method comprises epitaxially growing a first silicon-comprising film on a first silicon substrate that has an ad...