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| Number | Title | Issue Date |
| 7838308 | Method of controlling embedded material/gate proximity A method that includes forming a gate of a semiconductor device on a substrate and forming a recess for an embedded silicon-straining material in source and drain regions for the gate. In this method, a proximity value, which is defined as a distance between the gat... | 11/23/2010 |
| 7682845 | Methods for calibrating a process for growing an epitaxial silicon film and methods for growing an epitaxial silicon film Methods are provided for calibrating a process for growing an epitaxial silicon-comprising film and for growing an epitaxial silicon-comprising film. One method comprises epitaxially growing a first silicon-comprising film on a first silicon substrate that has an ad... | 03/23/2010 |
