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Inventor: Jin Hong AHN


Address: Anyang-si, KR
No. of applications: 1
Last application issue date: 10/07/2010

Application No.Application TitleIssue Date
20100252872NONVOLATILE FERROELECTRIC MEMORY DEVICE
A nonvolatile ferroelectric memory device includes a plurality of unit cell arrays, wherein each of the plurality of unit cell arrays includes: a bottom word line; a plurality of insulating layers formed on the bottom word line, respectively; a floating channel layer co...
10/07/2010
 
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