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Inventor: Hisashi Abe


Address: Chiba, JP
No. of patents: 4
Last patent issue date: 10/02/2012

NumberTitleIssue Date
8278195Plasma CVD apparatus
In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the appar...
10/02/2012
8053338Plasma CVD apparatus
In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the appar...
11/08/2011
6499427Plasma CVD apparatus
In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation o...
12/31/2002
6283060Plasma CVD apparatus
In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation o...
09/04/2001
 
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