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Inventor: Geum-Jong Bae


Address: Incheon-si, KR
No. of patents: 3
Last patent issue date: 07/01/2008

NumberTitleIssue Date
7394127Non-volatile memory device having a charge storage oxide layer and operation thereof
A non-volatile memory device includes a pair of source/drain regions disposed in a semiconductor substrate, having a channel region between them. A charge storage oxide layer is disposed on the channel region and overlaps part of each of the pair of source/drain reg...
07/01/2008
7184316Non-volatile memory cell array having common drain lines and method of operating the same
A nonvolatile memory cell array having common drain lines and method of operating the same are disclosed. A positive voltage is applied to a gate of a selected cell and gates of memory cells that share a word line with the selected cell. A first voltage is applied t...
02/27/2007
7179709Method of fabricating non-volatile memory device having local SONOS gate structure
in methods of fabricating a non-volatile memory device having a local silicon-oxide-nitride-oxide-silicon (SONOS) gate structure, a semiconductor substrate having a cell transistor area, a high voltage transistor area, and a low voltage transistor area, is prepared....
02/20/2007
 
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