|8370714||Reference cells for spin torque based memory device|
A method of reading and correcting data within a memory device that includes reading each data bit of a data word using a plurality of reference cells corresponding to each data bit, performing error detection on the read data bits, and correcting a read data bit wh...
|8233249||Magnetic tunnel junction transistor device|
A magnetic tunnel junction transistor (MTJT) device includes a source-drain region comprising a source electrode and a drain electrode, a double MTJ element formed between the source electrode and the drain electrode and comprising a free magnetic layer at a center ...
|8107285||Read direction for spin-torque based memory device|
A spin-torque based memory device includes a plurality of magnetic storage cells in an array, each magnetic storage cell includes at least one magnetic tunnel junction (MTJ) element, and at least one bit line and at least one bit complement line corresponding to the...