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Actor Marlon Brando has four patents, all named "Drumhead tensioning device and method."
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| Number | Title | Issue Date |
| 7811692 | Micro-machined fuel cells An improved fuel cell is described. The invention addresses the problem of mechanical failure in thin electrolytes. One embodiment varies the thickness of the electrolyte and positions at least either the anode or cathode in the recessed region to provide a short tr... | 10/12/2010 |
| 7459225 | Micro-machined fuel cells An improved fuel cell is described. The invention addresses the problem of mechanical failure in thin electrolytes. One embodiment varies the thickness of the electrolyte and positions at least either the anode or cathode in the recessed region to provide a short tr... | 12/02/2008 |
| 7123637 | Nitride-based laser diode with GaN waveguide/cladding layer A nitride-based laser diode structure utilizing a single GaN:Mg waveguide/cladding layer, in place of separate GaN:Mg waveguide and AlGaN:Mg cladding layers used in conventional nitride-based laser diode structures. When formed using an optimal thickness, the GaN:Mg... | 10/17/2006 |
| 6990132 | Laser diode with metal-oxide upper cladding layer A nitride-based laser diode structure utilizing a metal-oxide (e.g., Indium-Tin-Oxide (ITO) or Zinc-Oxide (ZnO)) in place of p-doped AlGaN to form the upper cladding layer. An InGaN laser diode structure utilizes ITO upper cladding structure, with an SiO2 | 01/24/2006 |
| 6724013 | Edge-emitting nitride-based laser diode with p-n tunnel junction current injection A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an edge-emitting nitride based semiconductor laser structure. The amount of p-type material in the nitride based semiconductor laser structure ... | 04/20/2004 |
| 6583449 | Semiconductor device and method of forming a semiconductor device A semiconductor device includes group III-V layers formed over a substrate. At least one of the group III-V layers is doped with a dopant. The dopant includes a first dopant and one of a second dopant and an isovalent impurity. The first dopant has a cova... | 06/24/2003 |
| 6570898 | Structure and method for index-guided buried heterostructure AlGalnN laser diodes An index-guided buried heterostructure AlGaInN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness ... | 05/27/2003 |
| 6567443 | Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes A self aligned, index-guided, buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding la... | 05/20/2003 |
| 6541292 | Method for forming an asymmetric nitride laser diode A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.... | 04/01/2003 |
| 6515308 | Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an nitride based vertical cavity surface emitting laser or light emitting diode structure. The p-n tunnel junction reduces the numbe... | 02/04/2003 |
| 6437374 | Semiconductor device and method of forming a semiconductor device A semiconductor device includes group III-V layers formed over a substrate. At least one of the group III-V layers is doped with a dopant. The dopant includes a first dopant and one of a second dopant and an isovalent impurity. The first dopant has a cova... | 08/20/2002 |
| 6430202 | Structure and method for asymmetric waveguide nitride laser diode A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.... | 08/06/2002 |
| 6389051 | Structure and method for asymmetric waveguide nitride laser diode A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.... | 05/14/2002 |
| 6288417 | Light-emitting devices including polycrystalline gan layers and method of forming devices Polycrystalline group III-nitride semiconductor materials such as GaN and alloys of GaN and other group III-nitrides are deposited as layers on polycrystalline and non-crystalline substrates. The polycrystalline GaN layers can be formed by solid-phase cry... | 09/11/2001 |
