Did You Know...
...that power steering was invented by independent inventor Francis W. Davis? As chief engineer in the 1920s of the truck division of the Pierce Arrow Motor Car Company, he saw how hard it was to steer heavy vehicles. So that he would be able to keep the profits from his future invention, Davis left his job, rented a small engineering shop in Waltham, Mass., and developed a hydraulic power steering system that led to power steering.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8273666 | Process to fabricate bottom electrode for MRAM device Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a Ta... | 09/25/2012 |
| 8269292 | Magnetic tunnel junction (MTJ) to reduce spin transfer magnetizaton switching current A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to | 09/18/2012 |
| 8184411 | MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co... | 05/22/2012 |
| 8176622 | Process for manufacturing a magnetic tunnel junction (MTJ) device A process for manufacturing a high performance MTJ it is described: A first cap layer of NiFeHf is deposited on the free layer, followed by a second cap layer of Ru on Ta. The device is then heated so that oxygen trapped in the free layer diffuses into the NiFeHf la... | 05/15/2012 |
| 8138561 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R.... | 03/20/2012 |
| 8080432 | High performance MTJ element for STT-RAM and method for making the same A method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO t... | 12/20/2011 |
| 8058698 | High performance MTJ element for STT-RAM and method for making the same An STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier la... | 11/15/2011 |
| 8057925 | Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier layer formed with a natural oxidation process to achieve low RA, a CoFe/R... | 11/15/2011 |
| 7986497 | Low resistance TMR read head fabricated by a novel oxidation method The invention is a magnetoresistive read head with an MTJ configuration having an ultra-thin tunneling barrier layer with low resistance and high breakdown strength. The barrier layer is formed by natural oxidation of an ultra-thin (two atomic layers) Al or Hf—Al ... | 07/26/2011 |
| 7978440 | Seed/AFM combination for CCP GMR device Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing ... | 07/12/2011 |
| 7948044 | Low switching current MTJ element for ultra-high STT-RAM and a method for making the same A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R is disclosed. The MTJ has a MgO tunnel barrier formed by natural oxidation to achieve a low RA, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nan... | 05/24/2011 |
| 7936539 | Bottom spin valve GMR sensor incorporating plural oxygen surfactant layers A bottom spin-valve GMR sensor has been fabricated that has ultra-thin layers of high density and smoothness. In addition, these layers are inherently furnished with sub-monolayer thick oxygen surfactant layers. The sensor is fabricated using a method in which the l... | 05/03/2011 |
| 7838436 | Bottom electrode for MRAM device and method to fabricate it Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon nitride surface. The ruthenium is a good electrical conductor and it responds differently from Ta and TaN to certain et... | 11/23/2010 |
| 7808027 | Free layer/capping layer for high performance MRAM MTJ An MTJ MRAM cell and its method of formation are described. The cell includes a composite free layer having the general form (Ni88Fe12)1-xCo100x—Ni92Fe8 with x between 0.05 and 0.1 that provides low... | 10/05/2010 |
| 7750421 | High performance MTJ element for STT-RAM and method for making the same A STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is f... | 07/06/2010 |
| 7672093 | Hafnium doped cap and free layer for MRAM device A high performance MTJ, and a process for manufacturing it, are described. A capping layer of NiFeHf is used to getter oxygen out of the free layer, thereby increasing the sharpness of the free layer-tunneling layer interface. The free layer comprises two NiFe layer... | 03/02/2010 |
| 7663131 | SyAF structure to fabricate Mbit MTJ MRAM A MTJ that minimizes error count (EC) while achieving high MR value, low magnetostriction, and a RA of about 1100 Ω-μm2 for 1 Mbit MRAM devices is disclosed. The MTJ has a composite AP1 pinned layer made of a lower amorphous Co60Fe20 | 02/16/2010 |
| 7630176 | Seed layer for fabricating spin valve heads for ultra-high density recordings A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. ... | 12/08/2009 |
| 7598579 | Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to | 10/06/2009 |
| 7595520 | Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle layer, and a Ru outer layer on the Ta layer. For example, a low magneti... | 09/29/2009 |
| 7564660 | Seed layer for fabricating spin valve heads for ultra-high density recordings A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. ... | 07/21/2009 |
| 7542249 | Bottom spin valve with laminated CoFe free layer for ultra-high density recording Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided, together with methods for their fabrication. In one embodiment, the sensor has an ultra thin ( | 06/02/2009 |
| 7536772 | Method of manufacturing a bottom spin valve with a laminated CoFe free layer A method is given for the manufacture of a bottom spin valve (BSV) spin filter spin valve (SFSV) type read sensor. The sensor has a composite, ultra-thin ( | 05/26/2009 |
| 7528457 | Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R An MTJ in an MRAM array or TMR read head is disclosed in which a capping layer has a bilayer configuration with a non-magnetic NiFeX inner layer on a NiFe free layer and a Ta layer on the NiFeX layer to improve dR/R and minimize magnetostriction. Optionally, a trila... | 05/05/2009 |
| 7479394 | MgO/NiFe MTJ for high performance MRAM application An improved tunneling barrier layer is formed for use in a MTJ device. This is accomplished by forming the tunneling barrier layer in two steps. First a layer of magnesium is deposited by DC sputtering and converted to magnesium oxide through radical oxidation. This... | 01/20/2009 |
| 7480173 | Spin transfer MRAM device with novel magnetic free layer A CPP MTJ MRAM element utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel free layer... | 01/20/2009 |
| 7449345 | Capping structure for enhancing dR/R of the MTJ device An MTJ in an MRAM array or in a TMR read head is comprised of a capping layer with a lower inter-diffusion barrier layer, an intermediate oxygen gettering layer, and an upper metal layer that contacts a top conductor. The composite capping layer is especially useful... | 11/11/2008 |
| 7423848 | Process and structure to fabricate CPP spin valve heads for ultra-high recording density A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen doped by adding a partial O2 pressure to the Ar sputtering ga... | 09/09/2008 |
| 7400475 | Patterned, synthetic longitudinally exchange biased GMR sensor Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagneti... | 07/15/2008 |
| 7394625 | Structure/method to form bottom spin valves for ultra-high density Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided together with methods for their fabrication. In each embodiment the sensor includes an in-situ naturally oxidized specularly reflecting layer (NOL) which i... | 07/01/2008 |
| 7390529 | Free layer for CPP GMR having iron rich NiFe By using a free layer that includes a NiFe layer containing between 65 and 72 atomic percent iron, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio than prior art devices, while maintaining free layer softness and ac... | 06/24/2008 |
| 7331100 | Process of manufacturing a seed/AFM combination for a CPP GMR device An improved seed/AFM structure is formed by first depositing a layer of tantalum on the lower shield. A NiCr layer is then deposited on the Ta followed by a layer of IrMn. The latter functions effectively as an AFM for thicknesses in the 40-80 Angstrom range, enabli... | 02/19/2008 |
| 7325295 | Structure/method to form bottom spin valves for ultra-high density Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided together with methods for their fabrication. In each embodiment the sensor includes an in-situ naturally oxidized specularly reflecting layer (NOL) which i... | 02/05/2008 |
| 7323215 | Free layer design for CPP GMR enhancement By using a composite free layer of Fe25% Co/NiFe, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio than prior art devices, while maintaining free layer softness and acceptable magnetostriction. A process for manufact... | 01/29/2008 |
| 7288281 | CPP spin valve with ultra-thin CoFe(50%) laminations Fe rich CoFe can be used in AP1 to enhance CPP GMR. However, this is found to degrade the electro-migration performance of the device. This problem has been solved by using an AP1 that is a laminate of several CoFe(25%) layers, separated from one another by copper l... | 10/30/2007 |
| 7264974 | Method for fabricating a low resistance TMR read head A method is provided for forming a magnetoresistive read head with an MTJ configuration having an ultra-thin tunneling barrier layer with low resistance and high breakdown strength. The barrier layer is formed by natural oxidation of an ultra-thin (two atomic layers... | 09/04/2007 |
| 7262941 | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularl... | 08/28/2007 |
| 7256971 | Process and structure to fabricate CPP spin valve heads for ultra-high recording density A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen doped by adding a partial O2 pressure to the Ar sputtering ga... | 08/14/2007 |
| 7238979 | Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM An MTJ (magnetic tunneling junction) device particularly suitable for use as an MRAM (magnetic random access memory) or a tunneling magnetoresistive (TMR) read sensor, is formed on a seed layer which allows the tunneling barrier layer to be ultra-thin, smooth, and t... | 07/03/2007 |
| 7234228 | Method of fabricating novel seed layers for fabricating spin valve heads A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there ... | 06/26/2007 |
