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Inventor: Amane OISHI


Address: Kamakura-shi, JP
No. of applications: 1
Last application issue date: 06/25/2009

Application No.Application TitleIssue Date
20090159979SEMICONDUCTOR DEVICE WITH MISFET
A semiconductor device includes a substrate, a semiconductor region provided in the substrate, a group of transistors including a plurality of MIS transistors and provided in the semiconductor region, the MIS transistors including a plurality of gate electrodes which ex...
06/25/2009
 
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