Inventor: Akimitsu Nakaue

Address: Kobe, JP
No. of patents: 4
Last patent issue date: 04/19/1994

Number	Title	Issue Date
5304461	Process for the selective deposition of thin diamond film by gas phase synthesis Thin diamond films can be selectively deposited imagewise on a substrate by gas phase synthesis. The substrate may be either a silicon substrate or a basal thin diamond film formed beforehand on a substrate by gas phase synthesis. Where a silicon substrat...	04/19/1994
5086014	Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin film A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH4, H2 and B2 H...	02/04/1992
5066938	Diamond film thermistor A diamond thin film thermistor having a substrate, an electrically insulating diamond layer formed on the substrate by vapor-phase synthesis, a semiconducting diamond layer as a temperature-sensing part on the electrically insulating diamond layer by vapo...	11/19/1991
4874939	Method and apparatus for detecting position/variance of input light using linear and quadratic outputs An apparatus for detecting position/variance of input light is disclosed which includes a photoelectric conversion device receiving input light constituted of a first resistive layer formed of a first photoelectric conversion material and a second resisti...	10/17/1989

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