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| Number | Title | Issue Date |
| 5759898 | Production of substrate for tensilely strained semiconductor A process and method for producing strained and defect free semiconductor layers. In a preferred embodiment, silicon on insulator may be used as a substrate for the growth of fully relaxed SiGe buffer layers. A new strain relief mechanism operates, whereb... | 06/02/1998 |
| 5461243 | Substrate for tensilely strained semiconductor A structure with strained and defect free semiconductor layers. In a preferred embodiment, silicon on insulator may be used as a substrate for the growth of fully relaxed SiGe buffer layers. A new strain relief mechanism operates, whereby the SiGe layer r... | 10/24/1995 |
