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Inventor: Zhenan Bao


Address: Stanford, CA
No. of applications: 36
Last application issue date: 01/03/2013

Application No.Application TitleIssue Date
20130001554Method Of Manufacturing Electric Device, Array Of Electric Devices, And Manufacturing Method Therefor
An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to fo...
01/03/2013
20120258569SELECTIVE NANOTUBE FORMATION AND RELATED DEVICES
Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotube...
10/11/2012
20120256296SEMICONDUCTOR MATERIALS, APPARATUSES AND METHODS
Various methods and apparatuses involving salt-based compounds and related doping are provided. In accordance with one or more embodiments, a salt-based material is introduced to a semiconductor material, is heated to generate a neutral compound that dopes the semicondu...
10/11/2012
20120104328Method of Selective Separation Of Semiconducting Carbon Nanotubes, Dispersion Of Semiconducting Carbon Nanotubes, And Electronic Device Including Carbon Nanotubes Separated By Using The Method
According to example embodiments, a method includes dispersing carbon nanotubes in a mixed solution containing a solvent, the carbon nanotubes, and a dispersant, the carbon nanotubes including semiconducting carbon nanotubes, the dispersant comprising a polythiophene de...
05/03/2012
20120075241Interface Apparatus And Methods
Input devices are provided. In accordance with an example embodiment, an input device includes an interface layer that flexes in response to pressure, a plurality of sense electrodes, a dielectric between the sense electrodes and the interface layer, and interconnecting...
03/29/2012
20120062245Pressure Sensing Apparatuses and Methods
Sensors, sensing arrangements and devices, and related methods are provided. In accordance with an example embodiment, an impedance-based sensor includes a flexible dielectric material and generates an output based on pressure applied to the dielectric material and a re...
03/15/2012
20110248267AIR-STABLE N-CHANNEL ORGANIC ELECTRONIC DEVICES
In connection with various example embodiments, an organic electronic device is provided with an organic material that is susceptible to decreased mobility due to the trapping of electron charge carriers in response to exposure to air. The organic material is doped with...
10/13/2011
20110248401NANOTUBE-BASED ELECTRODES
Transparent electrodes are manufactured. In accordance with various example embodiments, a transparent electrode is manufactured by generating a solution including a composite material having nanotubes and a conjugated polymer, in which the nanotubes constitute a majori...
10/13/2011
20110240980n-Type Doped Organic Materials and Methods Therefor
In accordance with various embodiments, an organic electronic device includes an n-type dopant material including an imidazole-based material having a hydrogen-based material bonded between nitrogen atoms. The n-type dopant material n-dopes an organic material, and can ...
10/06/2011
20110204330JOINED NANOSTRUCTURES AND METHODS THEREFOR
Nanostructures are joined using one or more of a variety of materials and approaches. As consistent with various example embodiments, two or more nanostructures are joined at a junction between the nanostructures. The nanostructures may touch or be nearly touching at th...
08/25/2011
20110204319FULLERENE-DOPED NANOSTRUCTURES AND METHODS THEREFOR
Nanostructures are doped to set conductivity characteristics. In accordance with various example embodiments, nanostructures such as carbon nanotubes are doped with a halogenated fullerene type of dopant material. In some implementations, the dopant material is deposite...
08/25/2011
20110088783Solar cell having organic nanowires
Example embodiments relate to a solar cell including organic nanowires. The solar cell may include a photoelectric conversion layer formed of a p-type material including an organic material and an n-type material including organic nanowires....
04/21/2011
20100308309PATTERNING OF ORGANIC SEMICONDUCTOR MATERIALS
Organic semiconductor material can be patterned from a solution onto a substrate by selectively wetting the substrate with the solution while applying a mechanical disturbance (such as stirring the solution while the substrate is immersed, or wiping the solution on the ...
12/09/2010
20100248421Method of forming organic thin film and method of manufacturing semiconductor device using the same
Provided are a method of forming an organic semiconductor thin film and a method of manufacturing a semiconductor device using the. According to example embodiments, a method of forming an organic semiconductor thin film at least may include exposing a lower substrate c...
09/30/2010
20100171108USE OF N,N'-BIS(1,1-DIHYDROPERFLUORO-C3-C5-ALKYL)-PERYLENE-3,4:9,10- TETRACARBOXYLIC DIIMIDES
The present invention relates to the use of N,N′-bis(1,1-dihydroperfluoro-C3-C5-alkyl)perylene-3,4:9,10-tetracarboxylic diimides as charge transport materials or exciton transport materials....
07/08/2010
20100001255SELECTIVE NANOTUBE FORMATION AND RELATED DEVICES
Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotube...
01/07/2010
20090297868Method for Forming Self-Assembled Monolayer Film, and Structural Body and Field-Effect Transistor Having Same
A method for forming a self-organized monomolecular film, including at least: dissolving an alkylsilane compound having at least an alkoxysilane group or a chlorosilane group at one end of a molecule in an organic solvent having a dielectric constant of 3.0 or more to 6...
12/03/2009
20090294760ORGANIC SEMICONDUCTORS AND GROWTH APPROACHES THEREFOR
Organic semiconductor devices exhibit desirable mobility characteristics. In connection with various example embodiments, a monolayer of methyl-terminated molecules exhibits density characteristics that are sufficient to promote two-dimensional growth of organic semicon...
12/03/2009
20080234424Carbon nanotube composite and method of preparing the same, carbon nanotube composite thin film prepared from the carbon nanotube composite and method of preparing the carbon nanotube composite thin film
A carbon nanotube composite includes a carbon nanotube and a conjugated polymer. The carbon nanotube composite has a liquid crystalline property and a thin film prepared by rubbing-treating a solution of the carbon nanotube composite has a good alignment property and th...
09/25/2008
20080142793Organic Semiconductors
Organic semiconducting devices and applications exhibit high performance largely due to a treatment substrate interacting with an asymmetric linear compound. According to an example, an organic compound arrangement includes a treated substrate and an asymmetric linear c...
06/19/2008
20080134961SINGLE-CRYSTAL ORGANIC SEMICONDUCTOR MATERIALS AND APPROACHES THEREFOR
Patterned single crystals and related devices are facilitated. According to an example embodiment of the present invention, organic semiconducting single-crystals are manufactured using a plurality of surface regions on a substrate. The diffusivity and/or the rate of de...
06/12/2008
20080087878USE OF PERYLENE DIIMIDE DERIVATIVES AS AIR-STABLE N-CHANNEL ORGANIC SEMICONDUCTORS
The present invention relates to the use of of perylene diimide derivatives as air-stable n-type organic semiconductors....
04/17/2008
20080090325METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
A method for producing an organic field-effect transistor, comprising the steps of:
  • a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the subst...
04/17/2008
20080054258USE OF PERYLENE DIIMIDE DERIVATIVES AS AIR-STABLE N-CHANNEL ORGANIC SEMICONDUCTORS
The present invention relates to the use of perylene diimide derivatives as air-stable n-type organic semiconductors. ...
03/06/2008
20080035914Use of perylene diimide derivatives as air-stable n-channel organic semiconductors
The present invention relates to the use of perylene diimide derivatives as air-stable n-type organic semiconductors....
02/14/2008
20080017850METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the ...
01/24/2008
20080009092Use of chlorinated copper phthalocyanines as air-stable n-channel organic semiconductors
The present invention relates to the use of chlorinated copper phthalocyanines as air-stable n-type organic semiconductors....
01/10/2008
20070269924Patterning nanowires on surfaces for fabricating nanoscale electronic devices
The present invention relates to a method of depositing nanowires on the surface of a substrate, comprising the steps of:
    • 11/22/2007
20070259475METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
A method for producing an organic field-effect transistor, comprising the steps of:
    • a) providing a substrate comprising...
11/08/2007
20070190783Patterning crystalline compounds on surfaces
A method of patterning the surface of a substrate with at least one organic semiconducting compound, comprising the steps of: (a) providing a stamp having a surface including a plurality of indentations formed therein defining an indentation pattern, said indentations b...
08/16/2007
20070069243FORMING CLOSELY SPACED ELECTRODES
The present invention provides an apparatus and a method of fabricating the apparatus. The apparatus comprises a substrate having a planar surface and first and second electrodes located on the planar surface. The first electrode has a top surface and a lateral surface,...
03/29/2007
20060138406OFET structures with both n- and p-type channels
The present invention provides a dual organic field-effect transistor (OFET) structure and a method of fabricating the structure. The dual OFET structure includes an n-type organic semiconductor layer and a p-type organic semiconductor layer in contact with each other a...
06/29/2006
20060134824P-type OFET with fluorinated channels
The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surface. T...
06/22/2006
20050285099OFET structures with both n- and p-type channels
The present invention provides a dual organic field-effect transistor (OFET) structure and a method of fabricating the structure. The dual OFET structure includes an n-type organic semiconductor layer and a p-type organic semiconductor layer in contact with each other a...
12/29/2005
20050205861P-type OFET with fluorinated channels
The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surface. T...
09/22/2005
20050014357Forming closely spaced electrodes
The present invention provides an apparatus and a method of fabricating the apparatus. The apparatus comprises a substrate having a planar surface and first and second electrodes located on the planar surface. The first electrode has a top surface and a lateral surface,...
01/20/2005
 
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