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| Application No. | Application Title | Issue Date |
| 20110227124 | LED Semiconductor Element Having Increased Luminance An LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active ... | 09/22/2011 |
| 20100065890 | Semiconductor Substrate of GaAs and Semiconductor Device A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of Al1-yGayAs1-xPx with 0≦x≦1 and 0≦y... | 03/18/2010 |
| 20090309120 | LED Semiconductor Element, and Use Thereof An LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active ... | 12/17/2009 |
| 20090173961 | Led Semiconductor Body and Use of an Led Semiconductor body An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction.... | 07/09/2009 |
| 20070090396 | Semiconductor substrate of GaAs and semiconductor device A semiconductor substrate (1) of GaAs with a semiconductor layer sequence (2) applied on top. The semiconductor layer sequence (2) contains a plurality of semiconductor layers (3, 4, 5, 6, 7) of Al1−yGayAs1−x 04/26/2007 | |
