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Inventor: Ming-Hua Yu


Address: Jhubei, TW
No. of applications: 1
Last application issue date: 04/30/2009

Application No.Application TitleIssue Date
20090108290Source/Drain Strained Layers
A semiconductor device and method of manufacture thereof wherein a PMOS source/drain region of a transistor within the substrate includes a first strained layer in the PMOS source/drain region and a first capping layer in contact with the first strained layer. Further, ...
04/30/2009
 
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