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Inventor: Kouji Masuzaki


Address: Tokyo, JP
No. of applications: 2
Last application issue date: 12/24/2009

Application No.Application TitleIssue Date
20090316484SEMICONDUCTOR MEMORY DEVICE, METHOD OF DRIVING THE SAME AND METHOD OF MANUFACTURING THE SAME
Disclosed is a semiconductor storage device comprising a semiconductor substrate, a first and a second impurity diffusion layer formed in the semiconductor substrate, a gate insulating film formed on the semiconductor substrate, and a first gate electrode formed on the ...
12/24/2009
20090267163Semiconductor Device
According to the present invention, a semiconductor device having a field effect transistor is provided. The field effect transistor comprises a gate insulating film 2 formed on a semiconductor layer 1 and a gate electrode 5 formed on the gate insul...
10/29/2009
 
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