British merchant Peter Durand invented the tin can in 1810.
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| Application No. | Application Title | Issue Date |
| 20090316484 | SEMICONDUCTOR MEMORY DEVICE, METHOD OF DRIVING THE SAME AND METHOD OF MANUFACTURING THE SAME Disclosed is a semiconductor storage device comprising a semiconductor substrate, a first and a second impurity diffusion layer formed in the semiconductor substrate, a gate insulating film formed on the semiconductor substrate, and a first gate electrode formed on the ... | 12/24/2009 |
| 20090267163 | Semiconductor Device According to the present invention, a semiconductor device having a field effect transistor is provided. The field effect transistor comprises a gate insulating film 2 formed on a semiconductor layer 1 and a gate electrode 5 formed on the gate insul... | 10/29/2009 |