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| Number | Title | Issue Date |
| 6972154 | Anodically bonded device structure We have developed a method of anodic bonding which directs cations to a location within a bonding structure which is away from critical bonding surfaces. This prevents the formation of compounds comprising the cations at the critical bonding surfaces. The anodic bon... | 12/06/2005 |
| 6962514 | Method and apparatus used in fabrication of MEMS stacks Disclosed herein are methods of fabricating three dimensional Micro-Electro-Mechanical-Systems (MEMS). This method involved stacking of silicon-containing components which are separated by spacers. The stacked components are precision aligned and then may be bonded,... | 11/08/2005 |
| 6759309 | Micromachined structures including glass vias with internal conductive layers anodically bonded to silicon-containing substrates Disclosed herein are methods of preparing vertical electrical interconnects within multiple layers of substrates, where a portion of the substrate layers are glass and a portion of the substrate layers are single-crystal silicon. The methods taught herein can be use... | 07/06/2004 |
| 6737355 | Thick thermal oxide layers and isolation regions in a silicon-containing substrate for high voltage applications Disclosed is a method of forming a thick silicon oxide layer upon or internal to a silicon structure. The method is particularly useful in creating isolation regions within a silicon-containing structure, where such isolation regions can withstand high voltages. The... | 05/18/2004 |
| 6475326 | Anodic bonding of a stack of conductive and glass layers We have developed a method of anodic bonding which directs cations to a location within a bonding structure which is away from critical bonding surfaces. This prevents the formation of compounds comprising the cations at the critical bonding surfaces. The... | 11/05/2002 |
