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Pneumatic Shoe Lacing Apparatus
This invention provides a pneumatic shoe lacing apparatus for the pneumatic lacing of shoe.
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| Application No. | Application Title | Issue Date |
| 20100187607 | LOW COST FABRICATION OF DOUBLE BOX BACK GATE SILICON-ON-INSULATOR WAFERS WITH BUILT-IN SHALLOW TRENCH ISOLATION IN BACK GATE LAYER A semiconductor wafer structure for manufacturing integrated circuit devices includes a bulk substrate; a lower insulating layer formed on the bulk substrate, the lower insulating layer formed from a pair of separate insulation layers having a bonding interface therebet... | 07/29/2010 |
| 20100176453 | LOW COST FABRICATION OF DOUBLE BOX BACK GATE SILICON-ON-INSULATOR WAFERS WITH BUILT-IN SHALLOW TRENCH ISOLATION IN BACK GATE LAYER A semiconductor wafer structure for manufacturing integrated circuit devices includes a bulk substrate; a lower insulating layer formed on the bulk substrate, the lower insulating layer formed from a pair of separate insulation layers having a bonding interface therebet... | 07/15/2010 |
| 20100176482 | LOW COST FABRICATION OF DOUBLE BOX BACK GATE SILICON-ON-INSULATOR WAFERS WITH SUBSEQUENT SELF ALIGNED SHALLOW TRENCH ISOLATION A semiconductor substrate structure for manufacturing integrated circuit devices includes a bulk substrate; a lower insulating layer formed on the bulk substrate, the lower insulating layer formed from a pair of separate insulation layers having a bonding interface ther... | 07/15/2010 |
| 20080124881 | INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR Si-Ge BIPOLAR TECHNOLOGY A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base re... | 05/29/2008 |
| 20070241428 | TRANSISTOR STRUCTURE WITH MINIMIZED PARASITICS AND METHOD OF FABRICATING THE SAME A transistor having minimized parasitics is provided including an emitter having a recessed extrinsic emitter portion atop an intrinsic emitter portion; a base including an intrinsic base portion in electrical contact with the intrinsic emitter portion and an extrinsic ... | 10/18/2007 |
| 20060249814 | Transistor structure with minimized parasitics and method of fabricating the same A transistor having minimized parasitics is provided including an emitter having a recessed extrinsic emitter portion atop an intrinsic emitter portion; a base including an intrinsic base portion in electrical contact with the intrinsic emitter portion and an extrinsic ... | 11/09/2006 |
| 20050191911 | Transistor structure with minimized parasitics and method of fabricating the same A transistor having minimized parasitics is provided including an emitter having a recessed extrinsic emitter portion atop an intrinsic emitter portion; a base including an intrinsic base portion in electrical contact with the intrinsic emitter portion and an extrinsic ... | 09/01/2005 |
| 20050054171 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base re... | 03/10/2005 |
