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Inventor: David C. Ahlgren


Address: Wappingers Falls, NY
No. of applications: 3
Last application issue date: 09/20/2007

Application No.Application TitleIssue Date
20070218641FULLY SILICIDED EXTRINSIC BASE TRANSISTOR
A system and method comprises forming an intrinsic base on a collector. The system and method further includes forming a fully silicided extrinsic base on the intrinsic base by a self-limiting silicidation process at a predetermined temperature and for a predetermined a...
09/20/2007
20050242373Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border
The present invention provides a bipolar transistor having a raised extrinsic base silicide and an emitter contact border that are self-aligned. The bipolar transistor of the present invention exhibit reduced parasitics as compared with bipolar transistors that do not i...
11/03/2005
20050121748Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border
The present invention provides a bipolar transistor having a raised extrinsic base silicide and an emitter contact border that are self-aligned. The bipolar transistor of the present invention exhibit reduced parasitics as compared with bipolar transistors that do not i...
06/09/2005
 
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