Quotables
"It is my heart-warmed and world-embracing Christmas hope and aspiration that all of us, the high, the low, the rich, the poor, the admired, the despised, the loved, the hated, the civilized, the savage (every man and brother of us all throughout the whole earth), may eventually be gathered together in a heaven of everlasting rest and peace and bliss, except the inventor of the telephone. "
Mark Twain ; Christmas greetings, 1890
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| Application No. | Application Title | Issue Date |
| 20100308424 | Triple-Axis MEMS Accelerometer Having a Bottom Capacitor An integrated circuit structure includes a substrate having a top surface; a first conductive layer over and contacting the top surface of the substrate; a dielectric layer over and contacting the first conductive layer, wherein the dielectric layer includes an opening ... | 12/09/2010 |
| 20100301433 | Triple-Axis MEMS Accelerometer An integrated circuit structure includes a triple-axis accelerometer, which further includes a proof-mass formed of a semiconductor material; a first spring formed of the semiconductor material and connected to the proof-mass, wherein the first spring is configured to a... | 12/02/2010 |
| 20100258883 | Metal-Ceramic Multilayer Structure A metal-ceramic multilayer structure is provided. The underlying layers of the metal/ceramic multilayer structure have sloped sidewalls such that cracking of the metal-ceramic multilayer structure may be reduced or eliminated. In an embodiment, a layer immediately under... | 10/14/2010 |
| 20100225708 | MEMS Devices and Methods of Fabrication Thereof MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner mater... | 09/09/2010 |
| 20100203664 | Silicon Undercut Prevention in Sacrificial Oxide Release Process and Resulting MEMS Structures When a native oxide grows on a polysilicon member of, e.g., a MEMS device, delamination between the polysilicon member and subsequently formed layers may occur because the native oxide is undercut during removal of sacrificial oxide layers. Nitriding the native oxide in... | 08/12/2010 |
| 20100178732 | Laser Bonding for Stacking Semiconductor Substrates Methods and structures using laser bonding for stacking semiconductor substrates are described. In one embodiment, a method of forming a semiconductor device includes forming a trench in a first substrate, and a bond pad on a second substrate comprising active circuitry... | 07/15/2010 |
| 20100117168 | MEMS Microphone with Single Polysilicon Film An integrated circuit structure includes a capacitor, which further includes a first capacitor plate formed of polysilicon, and a second capacitor plate substantially encircling the first capacitor plate. The first capacitor plate has a portion configured to vibrate in ... | 05/13/2010 |
| 20100120260 | Multi-Step Process for Forming High-Aspect-Ratio Holes for MEMS Devices A method of forming an integrated circuit structure includes forming an opening in a substrate, with the opening extending from a top surface of the substrate into the substrate. The opening is filled with a filling material until a top surface of the filling material i... | 05/13/2010 |
| 20100120202 | Method for Reducing Chip Warpage A method of forming an integrated circuit structure including providing a wafer comprising a front surface and a back surface, wherein the wafer comprises a chip; forming an opening extending from the back surface into the chip; filling an organic material in the openin... | 05/13/2010 |
