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...that Thomas Edison's patent application on his phonograph was approved by the Patent Office in just seven weeks? In contrast, it took Gordon Gould, the inventor of the laser, 30 years to obtain his patent -- finally awarded in 1988!
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| Application No. | Application Title | Issue Date |
| 20120051995 | METHODS OF PURIFYING COS Disclosed is a process to purify COS and remove H2S without hydrolyzing or trapping the desired COS product.... | 03/01/2012 |
| 20110275215 | METHOD FOR FORMING A TITANIUM-CONTAINING LAYER ON A SUBSTRATE USING AN ATOMIC LAYER DEPOSITION (ALD) PROCESS A method for forming a titanium-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Ti(Me5Cp)(OR)3 (I), wherein R is selected in the group cons... | 11/10/2011 |
| 20110250354 | TITANIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium titanate containing layers using vapor deposition methods such as chemical va... | 10/13/2011 |
| 20100233829 | CYCLIC AMINO COMPOUNDS FOR LOW-K SILYLATION Disclosed herein are mono-functional silylating compounds that may exhibit enhanced silylating capabilities. Also disclosed are method of synthesizing and using these compounds. Finally methods to determine effective silylation are also disclosed.... | 09/16/2010 |
| 20100221577 | METHOD FOR THE DEPOSITION OF A RUTHENIUM CONTAINING FILM The invention concerns the use of the ruthenium containing precursor having the formula (Rn-chd) Ru(CO)3, wherein:— (Rn-chd) represents a cyclohexadiene (chd) ligand substituted with n substituents R, any R being in any position on the... | 09/02/2010 |
| 20100221428 | METHOD FOR DEPOSITING SILICON NITRIDE FILMS AND/OR SILICON OXYNITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION Pentakis(dimethylamino) disilane comprising compound is used along with a nitrogen containing gas and optionally an oxygen containing gas for SiN (and optionally SiON) film deposition by CVD.... | 09/02/2010 |
| 20100193951 | METAL PRECURSORS FOR DEPOSITION OF METAL-CONTAINING FILMS Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temper... | 08/05/2010 |
| 20100130025 | METHOD FOR FORMING A DIELECTRIC FILM AND NOVEL PRECURSORS FOR IMPLEMENTING SAID METHOD The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the diele... | 05/27/2010 |
| 20100104755 | DEPOSITION METHOD OF TERNARY FILMS Method for producing a metal-containing film by introducing a metal source which does not contain metal-C or metal-N—C s-bonds (for example, TaCl<SUB>5</SUB>, SEt<SUB>2</SUB>), a silicon precursor (for example, SiH(NMe<SUB>2</SUB>)&... | 04/29/2010 |
| 20100078601 | Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using vapor deposition methods such as chemical vapor deposition... | 04/01/2010 |
| 20100055310 | GROUP V METAL CONTAINING PRECURSORS AND THEIR USE FOR METAL CONTAINING FILM DEPOSITION Compound of the formula (Ia), or of the formula (Ib). These new precursors are useful for pure metal, metallic oxide, oxynitride, nitride and/or silicide film deposition to make electrodes and/or high k layers, and/or copper diffusion barrier layers, etc.... | 03/04/2010 |
| 20100034971 | METHOD FOR THE DEPOSITION OF A RUTHENIUM CONTAINING FILM Organometallic compound of the formula (I): wherein: L is a non-aromatic cyclic unsaturated hydrocarbon ligand (L), having at least six cyclic carbon atoms, said cycle being unsubstituted or substituted, and X is either a non aromatic cyclic unsaturated hydrocarbon liga... | 02/11/2010 |
| 20100022790 | METHODS FOR SYNTHESIS OF HETEROLEPTIC CYCLOPENTADIENYL TRANSITION METAL PRECURSORS Methods for forming heteroleptic amidinate or guanidinate cyclopentadienyl containing transition metal precursors through synthesis reactions.... | 01/28/2010 |
| 20100016620 | PENTAKIS(DIMETHYLAMINO) DISILANE PRECURSOR COMPRISING COMPOUND AND METHOD FOR THE PREPARATION THEREOF Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON.... | 01/21/2010 |
| 20100003532 | BETA-DIKETIMINATE PRECURSORS FOR METAL CONTAINING FILM DEPOSITION Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor, and at least one substrate disposed in the reactor, are provided. A metal containing precursor with at least one β-diketiminate ligand is provided and introduced in... | 01/07/2010 |
| 20100003835 | Low-K Precursors Based on Silicon Cryptands, Crown Ethers and Podands Disclosed herein is the use of a silicon podand, silicon crown ether, or silicon cryptand to form a low-k dielectric film on a substrate.... | 01/07/2010 |
| 20090311879 | METHOD OF FORMING HIGH-K DIELECTRIC FILMS BASED ON NOVEL TITANIUM, ZIRCONIUM, AND HAFNIUM PRECURSORS AND THEIR USE FOR SEMICONDUCTOR MANUFACTURING A method of forming on at least one support at least one metal containing dielectric films having the formula (M11-a M2a) Ob Nc, wherein: 0≦a<1, 01 and M2 being metals Hf, Zr or Ti using p... | 12/17/2009 |
| 20090302434 | Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or at... | 12/10/2009 |
| 20080268642 | DEPOSITION OF TRANSITION METAL CARBIDE CONTAINING FILMS Methods and compositions for the deposition of a transition metal containing film in a semiconductor manufacturing process. A first vaporized metal precursor is introduced into a reaction chamber along with a second precursor mixture which comprises at least one carbon ... | 10/30/2008 |
| 20080260969 | Method for Producing Silicon Nitride Films (Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively h... | 10/23/2008 |
| 20080253948 | METHOD FOR THE RECYCLING AND PURIFICATION OF AN INORGANIC METALLIC PRECURSOR Methods and apparatus for the recycling and purification of an inorganic metallic precursor. A first gaseous stream containing ruthenium tetroxide is provided, and transformed into a solid phase lower ruthenium oxide. This lower phase ruthenium oxide is reduced with hyd... | 10/16/2008 |
