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Inventor: Cheon-Soo Kim


Address: Taejon, KR
No. of patents: 3
Last patent issue date: 03/22/2005

NumberTitleIssue Date
6870222Device structure of RF LDMOS with trench type sinker
A device structure of a LDMOSFET has trench type sinker formed using a trench process. A semiconductor layer of a first conductive type is formed within the device structure. A field area is formed in a trench structure on one side of the semiconductor layer and a g...
03/22/2005
6620667Method of making a HF LDMOS structure with a trench type sinker
A method of forming an HF power device. The method includes forming a semiconductor layer as a first conductive type on a semiconductor substrate; etching the semiconductor layer forming a first trench; doping an impurity in the neighborhood of the first ...
09/16/2003
6274920Integrated inductor device and method for fabricating the same
A method for fabricating an inductor device includes the steps of forming a plurality of trenches in a substrate by selectively etching the substrate, implanting dopants into sidewalls and bottom portion of each trench, forming an oxide layer by oxidizing...
08/14/2001
 
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