U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Icon_funbox Quotables

"I think there is a world market for maybe five computers."

Thomas Watson, chairman of IBM ; 1943

Newsletter  PatentStorm News

Make the Most of Our Site

See this month's Top Inventors and Most Cited Patents.

Stay on top of the latest innovations by subscribing to an RSS feed.

Registered users: Manage your profile.

 

Inventor: Akitoshi Hiraki


Address: Yasugi, JP
No. of patents: 6
Last patent issue date: 09/15/1998

NumberTitleIssue Date
5807443Sputtering titanium target assembly and producing method thereof
A cold-worked titanium material subjected to isostatic material and a backing plate are brought into contact with each other and subsequently hot-pressing. By such working the titanium material and the backing plate are bonded with each other by mutual di...
09/15/1998
5489367Target for reactive sputtering and film-forming method using the target
A target for use in reactive sputtering for forming a film by a reaction with nitrogen, which is a target being composed substantially of titanium and nitrogen and having a nitrogen/titanium atomic ratio, N/Ti, of 0.20 to 0.95, and is used for forming a f...
02/06/1996
5320729Sputtering target
Disclosed herein is a sputtering target with which a high resistivity thin film consisting of chromium, silicon and oxygen can be produced economically and stably for a long time. Also disclosed is a process for producing the sputtering target by selectin...
06/14/1994
5306569Titanium-tungsten target material and manufacturing method thereof
A titanium-tungsten target material capable of limiting the amount of particles generated during sputtering and a method of manufacturing this titanium-tungsten material. The titanium-tungsten target material has a titanium-tungsten alloy phase which occu...
04/26/1994
5298338Titanium-tungsten target material and manufacturing method thereof
A titanium-tungsten target material used to form, by sputtering, a barrier metal or the like for use in semiconductor devices. The titanium-tungsten target material is substantially composed of tungsten particles and a titanium-tungsten alloy phase surrou...
03/29/1994
5160534Titanium-tungsten target material for sputtering and manufacturing method therefor
Ti-W target material for sputtering includes a structure composed of a W phase, a Ti phase, and a Ti-W alloy phase of which 20% or more consist of the area ratio of a micro structure covering the cross section of the Ti-W target material. The Wi-W target ...
11/03/1992
 
Sign InRegister
Username  
Password   
forgot password?