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Meeks, Timothy


Primary examiner statistics: 956 patents; average approval time: 955 days
Assistant examiner statistics: 239 patents; average approval time: 727 days

Patents as Assistant Examiner


1            
NumberTitleIssue Date
6074696Substrate processing method which utilizes a rotary member coupled to a substrate holder which holds a target substrate
A substrate processing apparatus includes a processing vessel, a substrate holder, arranged in the processing vessel, for holding a target substrate, a rotary member coupled to the substrate holder and having a hollow portion, at an intermediate portion t...
06/13/2000
5989633Process for overcoming CVD aluminum selectivity loss with warm PVD aluminum
The present invention provides a process for depositing a planarized metal film on a dielectric surface having nonuniform conductor material deposits formed thereon. The planarized metal layer is formed using a warm physical vapor deposition process at a ...
11/23/1999
5968594Direct liquid injection of liquid ammonia solutions in chemical vapor deposition
The invention encompasses delivery of reactants for chemical vapor deposition by direct liquid injection of a liquid ammonia solution. In a preferred embodiment, a solution of titanium tetraiodide in liquid ammonia provides reactants for the deposition of...
10/19/1999
5968587Systems and methods for controlling the temperature of a vapor deposition apparatus
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed i...
10/19/1999
5962065Method of forming polysilicon having a desired surface roughness
A method for reliably forming polysilicon of a desired surface roughness includes providing a layer of doped or undoped amorphous silicon on a substrate and heating said substrate while monitoring the emission of said substrate and comparing the monitored...
10/05/1999
5952059Forming a piezoelectric layer with improved texture
A method is provided for forming a piezoelectric layer with improved texture. In the method, a metallic material is evaporated. A noble gas is combined with a reactant gas. An atomic reactant gas flow is generated from the combined gas using a plasma sour...
09/14/1999
5935662Unwinding of plastic film in the presence of a plasma
Supplying gases towards the web as it separates from the drum in a plasma-enhanced chemical vapor deposition system reduces the sticking of the web to the drum, and thus prevents power supply dropouts. The gas supplied can form into a plasma that helps di...
08/10/1999
5928723Progress for producing surface modified metal oxide compositions
A process for producing surface modified metal oxide and/or organo-metal oxide compositions comprising esterifying at least a portion of the metal oxide and/or organo-metal oxide composition through contact with at least one esterification agent and at le...
07/27/1999
5925411Gas-based substrate deposition protection
A platen supports a substrate on an interior platen region during the deposition of materials such as tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition ("CVD") reactor. A deposition control gas composed of a suitable ine...
07/20/1999
5919531Tantalum and tantalum-based films and methods of making the same
A method for chemical vapor deposition of a film comprising tantalum onto a substrate includes introducing into a deposition chamber: (i) a substrate; (ii) a source precursor in the vapor state; and (iii) at least one carrier gas, and maintaining the temp...
07/06/1999
5916633Fabrication of carbon/carbon composites by forced flow-thermal gradient chemical vapor infiltration
The fabrication of carbon/carbon composite disks using forced flow-thermal gradient chemical vapor infiltration process using propylene diluted with hydrogen as the reagent is disclosed. The independent variables included concentration of the reagent, tot...
06/29/1999
5911961Catalyst for purification of diesel engine exhaust gas
A catalyst for the purification of diesel engine exhaust gas is disclosed which excels in the ability to remove by combustion unburnt hydrocarbons and carbon monoxide as well as minute carbon particles in a wide temperature range from a low temperature zo...
06/15/1999
5910618Process for preparing 2,3-dimethyl-2-butene
2,3-Dimethyl-2-butene is prepared by isomerizing 2,3-dimethyl-1-butene using at least one acid selected from the group consisting of sulfuric acid and sulfonic acids. By this process, 2,3-dimethyl-2-butene is effectively prepared from 2,3-dimethyl-1-buten...
06/08/1999
5908672Method and apparatus for depositing a planarized passivation layer
A planarized passivation layer is described. A planarized passivation layer of the present invention preferably includes a fluorosilicate glass (FSG) layer and a silicon nitride layer. The FSG layer is preferably deposited using triethoxyfluorosilane (TEF...
06/01/1999
5908804Reduction of emissions from FCC regenerators
Coke is burned in the regenerator vessel of an FCC complex with a combustion medium consisting of a diluent gas, such as air, enriched with oxygen, The regenerator is operated in partial combustion mode and excess oxygen is introduced into the combustion ...
06/01/1999
5904957Vapour phase chemical infiltration process for densifying porous substrates disposed in annular stacks
A chemical vapor infiltration method for densifying porous substrates disposed in annular stacks. The substrates to be densified (12) are loaded inside a reaction chamber (11) of an infiltration oven, being disposed in at least one annular stack (30) defi...
05/18/1999
5904952Method of plasma enhanced silicon oxide deposition
A method of depositing a hard silicon oxide based film is provided by controllably flowing a gas stream including an organosilicon compound into a plasma. The organosilicon compound is preferably combined with oxygen and helium and at least a portion of t...
05/18/1999
5902651Method of reducing carbon incorporation into films produced by chemical vapor deposition involving titanium organometallic and metal-organic precursor compounds
A chemical vapor deposition method of providing a layer of material atop a semiconductor substrate using an organometallic or metal-organic precursor in a manner which minimizes carbon incorporation in the layer includes, a) positioning a substrate within...
05/11/1999
5902640Method of improving field emission characteristics of diamond thin films
A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already...
05/11/1999
5900279Processes for the chemical vapor deposition and solvent used for the processes
The present invention offers processes for CVD (chemical vapor deposition) that enables one to use a new metallic organic compound as a raw material resource. The present invention involves the steps of: adding a metallic organic compound having a group c...
05/04/1999
5901271Process of evaporating a liquid in a cyclone evaporator
A cyclone evaporator includes an evaporator body with an evaporation chamber therein. The evaporation chamber preferably includes a thermally conductive sidewall having a generally cylindrical upper portion and a downwardly tapered lower portion. The evap...
05/04/1999
5900289Method of producing a colorating coating
A method of producing a thin coating by plasma-assisted chemical vapor phase deposition from a carbonaceous and metalliferous gas phase of a predetermined composition on a substrate surface especially in the form of a diamond-like carbon-silicon-hydrogen ...
05/04/1999
5897916Process for production of coated ceramic member
A coated ceramic member includes a silicon nitride- or silicon carbide-based ceramic base material, a silicon nitride or silicon carbide film formed on the base material by CVD, and an oxide film formed on the film of CVD, and a process for producing the ...
04/27/1999
5891513Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications
A method of utilizing electroless copper deposition to form interconnects on a semiconductor wafer. Once a via or a trench is formed in a dielectric layer, a titanium nitride (TiN) or tantalum (Ta) barrier layer is blanket deposited. Then, a contact displ...
04/06/1999
5888924Pollutant removal from air in closed spaces
A catalyst system useful at room temperature for the destruction of ozone (O3), which is comprised of a washcoat of high surface area support containing Mn/Cu catalyst deposited on a macroporous carrier, such as a honeycomb monolith, optionally...
03/30/1999
5885894Method of planarizing an inter-layer dielectric layer
A method of planarizing an inter-layer dielectric layer includes using a high density plasma chemical vapor deposition method to deposit an undoped dielectric, which increases the polishing efficiency in a subsequent chemical-mechanical polishing operatio...
03/23/1999
5880055Catalyst for polymerization of ethylene
The present invention concerns heterogeneous catalysts for polymerization of olefins. The catalysts include at least one Group IVa metal compound on a solid inorganic oxidic support. According to the invention the catalysts are prepared by vapourizing at ...
03/09/1999
5876793Fine powders and method for manufacturing
The invention relates to the encapsulation of Geldhart class C substrate powders with a coating of metal, binder, or sintering aid. Encapsulation is achieved using chemical vapor deposition techniques in a recirculating fast-fluidized or turbulent fluidiz...
03/02/1999
5876796Process for selectively depositing a refractory metal silicide on silicon, and silicon wafer metallized using this process
Process for selectively depositing a refractory metal silicide on a surface of a monocrystalline or polycrystalline silicon wafer, comprising: a step of preparing said surface, consisting in forming a silicon oxide or silicon oxynitride layer having a thi...
03/02/1999
5876683Combustion flame synthesis of nanophase materials
A low pressure combustion flame method for the production of nanophase powders, coatings and free-standing forms. The process involves controlled thermal decomposition of one or more metalorganic precursors in a flat-flame combustor unit in which both tem...
03/02/1999
5876798Method of fluorinated silicon oxide film deposition
Films of fluorinated silicon oxide, suitable for use as inter-metal dielectrics, have been deposited by means of CVD at reduced pressure using fluorotriethoxysilane (FTES) and tetra-exthyloxysilane (TEOS) as the precursors, together with ozone (mixed with...
03/02/1999
5871816Metallized textile
A process for activating a textile to catalyze the reduction of a metal cation, a process for metallizing the activated textile with the reduced metal, and the activated textile and metallized textile thereby produced. The textile is activated by precipit...
02/16/1999
5872072Catalytic compositions and a deodorizing method using the same
A malodorous component is eliminated using a catalytic composition comprising a phosphate of a tetravalent metal (titanium or other Group 4 elements of the Periodic Table of Elements), a hydroxide of a divalent metal (copper, zinc or other transition meta...
02/16/1999
5871622Method for making a spin valve magnetoresistive sensor
A process for making a spin valve magnetoresistive (SVMR) sensor includes forming a nickel-oxide (NiO) layer as the antiferromagnetic layer for pinning the magnetization of the pinned ferromagnetic layer in the SVMR sensor. The process includes forming th...
02/16/1999
5871805Computer controlled vapor deposition processes
A method for computerized control of vapor deposition processes, including chemical vapor deposition and electron beam physical vapor deposition processes, uses optical imaging sensors and/or laser interferometers or infrared ellipsometers focused on the ...
02/16/1999
5869135Selective chemical vapor deposition of polymers
A system for selective chemical vapor deposition of polymers onto a substrate. A substrate is provided which comprises a plurality of surface regions, wherein the surface of at least one region provides a more favorable nucleation site for at least one of...
02/09/1999
5866205Process for titanium nitride deposition using five- and six-coordinate titanium complexes
A method is provided for forming films comprising TiN or Ti--Si--N employing the techniques of chemical vapor deposition to decompose a vapor comprising a compound of the formula Ti›N(R1)(R2)!x ›(R3)N--C(R
02/02/1999
5863601Process of producing graphite fiber
A process of producing graphite fiber which includes the generation of the fiber by chemical vapor deposition using an organo metal compound which includes a metal catalyst and the use of a less reactive substance as a substrate to adhere carbon or metal ...
01/26/1999
5863598Method of forming doped silicon in high aspect ratio openings
A method of forming a doped silicon film on a substrate. According to the present invention, a substrate is placed in a reaction chamber and heated. Next, a silicon containing gas is fed into the reaction chamber to produce a silicon containing gas partia...
01/26/1999
5863602Method for capturing gaseous impurities and semiconductor device manufacturing apparatus
Before an HSG-Si film is formed, silicon films are pre-coated on the inner wall of a reaction chamber (12) for forming the HSG-Si film on a wafer (14) and in a boat (25) which is used for accommodate and support the wafer (14) in the reaction chamber (12)...
01/26/1999
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