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| Number | Title | Issue Date |
| 6610169 | Semiconductor processing system and method Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can depl... | 08/26/2003 |
| 6579374 | Apparatus for fabrication of thin films The invention relates to an apparatus for growing thin films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin film onto the substrate by means of said surface reactions. The apparatus co... | 06/17/2003 |
| 6576061 | Apparatus and method for processing a substrate A substrate-processing method comprising transporting a substrate to pass through a plurality of processing spaces communicated with each other while processing said substrate in each processing space, characterized in that based on an inner pressure of (... | 06/10/2003 |
| 6572732 | Parallel-plate electrode plasma reactor having an inductive antenna coupling power through a parallel plate electrode The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet sy... | 06/03/2003 |
| 6572707 | Vaporizer for sensitive precursors A vaporizer is provided for vaporizing sensitive liquid precursors in semiconductor processing applications. The vaporizer uses high flow conductance with large flow area to avoid precursor decomposition. The vaporizer also uses efficient heat conduction ... | 06/03/2003 |
| 6564744 | Plasma CVD method and apparatus The present invention provides a plasma CVD method for forming a plasma from a deposition material gas by application of an electric power, and thereby forming a film on a deposition target object in the plasma, wherein the formation of the plasma from th... | 05/20/2003 |
| 6564743 | Method for forming oxide film of semiconductor device, and oxide film forming apparatus capable of shortening pre-processing time for concentration measurement In an oxide film forming apparatus for a semiconductor device preprocessing time to measure concentration can be greatly shortened, and the oxide film can be formed with supreme reproducibility in stable manufacturing stages. The oxide film forming appara... | 05/20/2003 |
| 6562190 | System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber The present invention provides a system, apparatus, and method for processing a wafer using a single frequency RF power in a plasma processing chamber. The plasma processing system includes a modulated RF power generator, a plasma processing chamber, and ... | 05/13/2003 |
| 6562248 | Active control of phase shift mask etching process A system for monitoring and controlling aperture etching in a complimentary phase shift mask is provided. The system includes one or more light sources, each light source directing light to one or more apertures etched on a mask. Light reflected from the ... | 05/13/2003 |
| 6558506 | Etching system and etching chamber The present invention provides an etching system having a plurality of etching chambers (16, 18, 20) disposed about a transfer chamber (14), wherein the etching chambers are adapted to be selectively mounted at different positions with respect to the tran... | 05/06/2003 |
| 6553932 | Reduction of plasma edge effect on plasma enhanced CVD processes An appparatus for confining plasma within a process zone of a substrate processing chamber. In one aspect, an apparatus comprises an annular member having an upper mounting surface, an inner confinement wall, and an outer confinement wall. The apparatus i... | 04/29/2003 |
| 6553933 | Apparatus for injecting and modifying gas concentration of a meta-stable species in a downstream plasma reactor This invention provides an apparatus for injecting gas within a plasma reactor and tailoring the distribution of an active species generated by the remote plasma source over the substrate or wafer. The distribution may be made more or less uniform, wafer-... | 04/29/2003 |
| 6554952 | Method and apparatus for etching a gold metal layer using a titanium hardmask Disclosed is an inventive method for etching a gold metallization in a plasma processing chamber. The method includes introducing a substrate having a gold layer and an overlying titanium hardmask layer into the plasma processing chamber. The hardmask is ... | 04/29/2003 |
| 6554953 | Thin film electrostatic shield for inductive plasma processing A plasma reactor and methods for processing semiconductor substrates are described. An induction coil inductively couples power into the reactor to produce a plasma. A thin electrostatic shield is interposed between the induction coil and plasma to reduce... | 04/29/2003 |
| 6551447 | Inductive plasma reactor A plasma reactor and methods for processing semiconductor wafers are described. Gases are introduced into a reactor chamber. An induction coil surrounds the reactor chamber. RF power is applied to the induction coil and is inductively coupled into the rea... | 04/22/2003 |
| 6551445 | Plasma processing system and method for manufacturing a semiconductor device by using the same A parallel plate ECR plasma processing system is able to extend a plasma density region capable of keeping a continuous, uniform state. In this system, a first magnetic field-forming means formed of a solenoid coil and a second magnetic field-forming mean... | 04/22/2003 |
| 6551442 | Method of producing semiconductor device and system for producing the same A method of producing a semiconductor device having a multilayered wiring conductors and a system for producing the same. The nonuniformity of SOG coating film effectively suppressed and various treatments are simple and less time-consuming. A wiring cond... | 04/22/2003 |
| 6551444 | Plasma processing apparatus and method of processing A plasma processing apparatus and a method of plasma processing using the same obviate a problem in which an excessive amount of processing gas is supplied momentarily during an initial stage of the gas supply. In the process of supplying gas, a main cont... | 04/22/2003 |
| 6540837 | Quartz wafer processing chamber Described herein is a process chamber with a substantially all-quartz interior surface. The preferred embodiments have upper and lower walls being curved in both the x-z and y-z planes. In one embodiment, the chamber has thin upper and lower dome walls ma... | 04/01/2003 |
| 6540839 | Apparatus and method to passivate magnets and magnetic materials An apparatus and method is provided for uniformly coating a magnet having a plurality of surfaces and includes a reaction chamber having a port for introducing the magnet into the reaction chamber. A heater is also included for heating the reaction chambe... | 04/01/2003 |
| 6537421 | RF bias control in plasma deposition and etch systems with multiple RF power sources A method and apparatus are provided by which the effects of the plasma power RF source and substrate bias are decoupled to reduce the effect of plasma power on the wafer bias and to improve process control. A technique is provided that includes establishi... | 03/25/2003 |
| 6530341 | Deposition apparatus for manufacturing thin film A deposition apparatus of the present invention is arranged so that a surface area of a radio-frequency power applying cathode electrode disposed in a glow discharge space, in a space in contact with discharge is greater than a surface area of the whole o... | 03/11/2003 |
| 6530342 | Large area plasma source A chamber housing (2) enclosing a plasma region (20) in a large area plasma source used for performing plasma assisted processes in large area substrates, the chamber housing (2) being composed of: a housing member (2) constituting a substantially vertica... | 03/11/2003 |
| 6530994 | Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing A platform for supporting a semiconductor substrate during processing in a processing chamber includes a body having a first support surface for supporting the substrate thereon and a second support surface for being supported by a rotatable housing over ... | 03/11/2003 |
| 6527911 | Configurable plasma volume etch chamber A plasma processing chamber is provided. The plasma processing chamber includes a bottom electrode configured to support a substrate and a top electrode located over the bottom electrode. The plasma processing chamber further includes a plasma confinement... | 03/04/2003 |
| 6527912 | Stacked RF excitation coil for inductive plasma processor A radio frequency excitation coil of an inductive plasma processor includes a planar turn connected in series with a segment of the coil stacked above a portion of the planar turn. The stacked segment is placed around a region having weak radio frequency ... | 03/04/2003 |
| 6526910 | Apparatus and method for forming a deposited film by means of plasma CVD A film-forming apparatus by means of plasma CVD, comprising at least a vacuum chamber, a power application electrode for introducing a discharging power into said vacuum chamber, and a raw material gas supply means for supplying a film-forming raw materia... | 03/04/2003 |
| 6524490 | Method for electroless copper deposition using a hypophosphite reducing agent A method for improving the electrical conductivity and appearance of copper films produced by reduction of copper ions using hypophosphite, comprising exposure of the as-deposited copper film to a solution of dimethylamino borane (DMAB) or equivalents the... | 02/25/2003 |
| 6524429 | Method of forming buried wiring, and apparatus for processing substratum A method of forming a buried wiring comprising the steps of: (A) forming a wiring and a first insulating layer filled between the wirings on a substratum, (B) immersing the first insulating layer in a fluid which can dissolve the first insulating layer, t... | 02/25/2003 |
| 6524431 | Apparatus for automatically cleaning mask An apparatus for automatically cleaning a mask applied to a mask cleaning step after an evaporation process. An RF plasma is used to clean the mask. By isolating the RF plasma generator, the wafer table and the mask table from the grounded reaction chambe... | 02/25/2003 |
| 6524432 | Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna ove... | 02/25/2003 |
| 6524430 | Apparatus for fabricating a semiconductor device An apparatus for fabricating a semiconductor device comprising: a reactor for providing a reaction region separated from outside; a pedestal arranged within said reactor to support a semiconductor substrate; a substrate transport port for loading said sem... | 02/25/2003 |
| 6523494 | Apparatus for depositing low dielectric constant oxide film A composite silicon dioxide layer with a reduced dielectric constant is formed by enhancing the surface sensitivity of a PECVD liner layer with activated oxygen. Pores form in an SACVD layer of silicon dioxide deposited from a TEOS precursor over the sens... | 02/25/2003 |
| 6521082 | Magnetically enhanced plasma apparatus and method with enhanced plasma uniformity and enhanced ion energy control Within both a magnetically enhanced plasma apparatus and a magnetically enhanced plasma method there is employed: (1) a repetitive and geometrically selective pulsing of a magnetic field from a first level to a second level within a reactor chamber; and (... | 02/18/2003 |
| 6518195 | Plasma reactor using inductive RF coupling, and processes A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semico... | 02/11/2003 |
| 6517670 | Etching and cleaning apparatus In a plasma processing apparatus wherein plasma is generated in a vacuum chamber 1 thereby to perform etching to a substrate 8 placed on a substrate electrode 7, a voltage monitoring conductor 11 is provided in the vicinity of the substrate electrode 7, a... | 02/11/2003 |
| 6517665 | Liga developer apparatus system A system to fabricate precise, high aspect ratio polymeric molds by photolithograpic process is described. The molds for producing micro-scale parts from engineering materials by the LIGA process. The invention is a developer system for developing a PMMA ... | 02/11/2003 |
| 6517913 | Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma f... | 02/11/2003 |
| 6514377 | Apparatus for and method of processing an object to be processed A magnetron reactive ion etching apparatus comprises: an electrode unit including electrodes facing each other through a semiconductor device; a high-frequency power source forming an electric field on the electrode unit; a dipole ring magnet; and a switc... | 02/04/2003 |
| 6514375 | Dry etching endpoint detection system A method and system for determining a dry etching endpoint, at which a dry etching process should be terminated. The dry etching process is carried out in a plasma etching system and comprises the steps of detecting an intensity of light emission generate... | 02/04/2003 |
