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| Number | Title | Issue Date |
| 7463590 | System and method for threat detection and response In accordance with varying embodiments of the invention, systems, devices and methods for analyzing a network packet received from a remote source and destined for a network resource, the network packet having associated packet data, and for identifying a plurality ... | 12/09/2008 |
| 7459732 | Gas-sensitive field-effect transistor with air gap A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and th... | 12/02/2008 |
| 7459741 | Semiconductor memory device A semiconductor memory device excellent in data holding characteristics even when a cell area is reduced is disclosed. According to one aspect of the present invention, a semiconductor memory device comprises a transistor including a source, a drain and a channel re... | 12/02/2008 |
| 7457237 | Shared risk group handling within a media gateway A media gateway controller (MGC) is described herein that implements a shared risk group package to control and prevent a media gateway (MG) from establishing redundant links like a primary link and a secondary link that use resources that share the same risk of fai... | 11/25/2008 |
| 7456478 | MOS transistor circuit A reduction of a current capability of a MOS transistor (P1) is compensated by dynamically changing a substrate bias of the MOS transistor (P1) in response to a fluctuation of the power supply, and thus an operating speed is stabilized automatically. A... | 11/25/2008 |
| 7456462 | Fabricated U-shaped capacitor for a digital-to-analog converter A layered capacitor having top and bottom plates formed from multiple layers. The capacitor has a bottom layer comprising a bottom plate portion and at least one upper layer, each upper layer comprising top and bottom plate portions. A first set of vias connect the ... | 11/25/2008 |
| 7453117 | Non-volatile semiconductor memory device To achieve a high-speed and reliable read operation. A unit cell is constituted by a select gate 3 provided in a first region and on a substrate 1 with an insulating film 2 interposed inbetween, a floating gate 6a provided in a sec... | 11/18/2008 |
| 7453091 | Gallium nitride-based semiconductor device A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top p... | 11/18/2008 |
| 7453089 | Light-emitting device and display device Although an organic resin substrate is highly effective at reducing the weight and improving the shock resistance of a display device, it is required to improve the moisture resistance of the organic resin substrate for the sake of maintaining the reliability of an ... | 11/18/2008 |
| 7453098 | Vertical electrode structure of gallium nitride based light emitting diode A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and furthe... | 11/18/2008 |
| 7453119 | Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one active cell further includes a trenched source contact opened between the trenches wher... | 11/18/2008 |
| 7450601 | Method and communication apparatus for controlling a jitter buffer A method for controlling a jitter buffer and a communication apparatus implementing the method and functioning as a first node of a communication system, wherein the jitter butter is adapted to buffer a stream of blocks of compressed speech information generated in ... | 11/11/2008 |
| 7449764 | Semiconductor device and method of manufacturing the same Provided are a semiconductor device which substantially prevents repair failure and a method of manufacturing the same. The semiconductor device includes a plurality of first fuses formed apart from each other on a semiconductor substrate, and on which a protective ... | 11/11/2008 |
| 7450553 | System and method for selecting beacon transmission starting point in communication system A system and method for selecting a starting point to transmit a beacon (BTSP) from a coordinator and a first node in a communication system. The communication system includes the coordinator, a first node group with at least one node having the first node which rec... | 11/11/2008 |
| 7449752 | Post passivation interconnection schemes on top of the IC chips A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over... | 11/11/2008 |
| 7450615 | Apparatus and method for automatically bypassing a load coil in a digital subscriber line circuit An apparatus and method are provided for bypassing a load coil in a Digital Subscriber Line (DSL) circuit. An interface is provided for making a connection with the DSL circuit and receiving a combined multichannel signal. The combined multichannel signal includes a... | 11/11/2008 |
| 7446365 | Fabricated layered capacitor for a digital-to-analog converter A fabricated layered capacitor having three layers is provided. The first bottom layer comprises a first bottom plate portion, the second middle layer comprises a first top plate portion, and the third top layer comprises a second bottom plate portion of the layered... | 11/04/2008 |
| 7447225 | Multiple multicast forwarder prevention during NSF recovery of control failures in a router A technique prevents multiple multicast forwarders from forwarding multicast packets for a route over a link in a computer network during non-stop forwarding (NSF) recovery of one or more failures in a control plane of a multicast router. The multicast router has a ... | 11/04/2008 |
| 7442977 | Gated field effect devices This invention includes gated field effect devices, and methods of forming gated field effect devices. In one implementation, a gated field effect device includes a pair of source/drain regions having a channel region therebetween. A gate is received proximate the c... | 10/28/2008 |
| 7442988 | Semiconductor devices and methods of fabricating the same Disclosed is a semiconductor device and method of fabricating the same. The device is disposed on a substrate, including a fin constructed with first and second sidewalls, a first gate line formed in the pattern of spacer on the first sidewall of the fin, and a seco... | 10/28/2008 |
| 7442973 | Solid-state imaging device and production method therefor By improving the embedding property of a light-transmissive material constituting a waveguide, light collection efficiency is improved, and reliability of a solid-state imaging device is ensured. In a solid-state imaging device including a light-receiving sec... | 10/28/2008 |
| 7436859 | Demultiplexing device A demultiplexing apparatus includes a data obtainment unit to obtain the MP4 file data, and a decoding unit to demultiplex the MP4 file data obtained by the data obtainment unit into pairs of a moov and a mdat and pairs of a moof and a mdat, and decode those pairs p... | 10/14/2008 |
| 7436038 | Visible/near infrared image sensor array A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision... | 10/14/2008 |
| 7436023 | High blocking semiconductor component comprising a drift section A semiconductor component having a drift path (2) which is formed in a semiconductor body (1), is composed of a semiconductor material of first conductance type. The drift path (2) is arranged between at least one first and one second electrode ... | 10/14/2008 |
| 7432576 | Grid metal design for large density CMOS image sensor A new grid metal design for image sensors is disclosed which is comprised of a semiconductor image sensor chip having a pixel region covering most of the chip and a logic circuit region on the chip periphery. The pixel region contains, an array of image pixels where... | 10/07/2008 |
| 7432538 | Field-effect transistor A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula AlxGa1-xN, wherein x is greater than 0.04 and less than 0.45. T... | 10/07/2008 |
| 7432561 | Non-volatile semiconductor memory and method for manufacturing a non-volatile semiconductor memory An non-volatile semiconductor memory having a linear arrangement of a plurality of memory cell transistors, includes: a first semiconductor layer having a first conductivity type; a second semiconductor layer provided on the first semiconductor layer to prevent diff... | 10/07/2008 |
| 7429775 | Method of fabricating strain-silicon CMOS Recesses are formed in the drain and source regions of an MOS transistor. The recesses are formed using two anisotropic etch processes and first and second sidewall spacers. The recesses are made up of first and second recesses, and the depths of the first and secon... | 09/30/2008 |
| 7423319 | LDPMOS structure with enhanced breakdown voltage A semiconductor structure includes a first well region of a first conductivity type overlying a substrate, a second well region of a second conductivity type opposite the first conductivity type overlying the substrate and laterally adjoining the first well region, ... | 09/09/2008 |
| 7423316 | Semiconductor devices The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p− ... | 09/09/2008 |
| 7423305 | Solid-state image sensing device having high sensitivity and camera system using the same A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor ... | 09/09/2008 |
| 7423314 | Semiconductor memory device and method for the same A semiconductor substrate 20, a gate electrode 34, first and second impurity diffusion regions 24a and 24b, first and second variable-resistance regions 22a, 22b, first and second main electrodes ... | 09/09/2008 |
| 7420927 | Method and apparatus for determining troubleshooting information for completed calls in a telecommunications network After completion of a voice-over IP call, for example, first information representing a Layer 3 path of a packet flow of a completed call that has passed through a packet-switched network is created. Second information representing a Layer 2 path of a packet flow of... | 09/02/2008 |
| 7420928 | Testing of transmission quality in packet-based networks The invention relates to the testing of transmission quality of transmission links in a packet network. According to the invention, the director and responder functionality are made available in a resource server of the packet network. In order to perform a quality ... | 09/02/2008 |
| 7420218 | Nitride based LED with a p-type injection region An LED chip (2) is composed of a p-GaN layer (10), an n-GaN layer (14), and an MQW emission layer (12) that is sandwiched between the GaN layers (10 and 14). Each layer is made of a GaN semiconductor. Light exits the LED chi... | 09/02/2008 |
| 7420246 | Vertical type semiconductor device and method for manufacturing the same A vertical type semiconductor device includes: a silicon substrate having a first surface and a second surface; a first electrode disposed on the first surface of the silicon substrate; and a second electrode disposed on the second surface of the silicon substrate. ... | 09/02/2008 |
| 7417272 | Image sensor with improved dynamic range and method of formation Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one semiconductor channel region, at least one gate for controlling the chann... | 08/26/2008 |
| 7414285 | Nonvolatile semiconductor memory device A nonvolatile semiconductor memory device includes a first insulating film provided on a surface of a semiconductor substrate, a charge accumulation layer provided on the first insulating film, a second insulating film provided above the charge accumulation layer an... | 08/19/2008 |
| 7414280 | Systems and methods for memory structure comprising embedded flash memory A memory structure that combines multiple embedded flash memory. The flash memory can be used, e.g., as air replacement cells or back up memory, or additional memory cells. In one aspect, the flash memory cells are stacked on top of the flash memory cells and the fl... | 08/19/2008 |
| 7411260 | Semiconductor device and manufacturing method thereof A method for improving productivity when manufacturing a semiconductor device. A lower electrode, insulating films, an upper electrode and insulating films are formed on a semiconductor substrate in a sensor region. A cavity is formed between the insulator films abo... | 08/12/2008 |
