| Patent No. | Patent Title: |
| 5396084 | Thin film transistor device having driving circuit and matrix cir... |
| 5396100 | Semiconductor integrated circuit device having a compact arrangem... |
| 5359206 | Thin film transistor substrate, liquid crystal display panel and ... |
| 5355002 | Structure of high yield thin film transistors |
| 5341000 | Thin silicon carbide layer on an insulating layer |
| 5338961 | High power MOSFET with low on-resistance and high breakdown volta... |
| 5334580 | Superconducting device having superconducting weak coupling |
| 5334859 | Thin-film transistor having source and drain electrodes insulated... |
| 5329161 | Molybdenum boride barrier layers between aluminum and silicon at ... |
| 5326991 | Semiconductor device having silicon carbide grown layer on insula... |
| 5323042 | Active matrix liquid crystal display having a peripheral driving ... |
| 5319231 | Insulated gate semiconductor device having an elevated plateau li... |
| 5319221 | Semiconductor device with MISFET-controlled thyristor |
| 5315144 | Reduction of bipolar gain and improvement in snap-back sustaining... |
| 5313076 | Thin film transistor and semiconductor device including a laser ... |
| 5311051 | Field effect transistor with offset region |
| 5308998 | Insulated gate field effect semiconductor devices having a LDD re... |
| 5309007 | Junction field effect transistor with lateral gate voltage swing ... |
| 5308997 | Self-aligned thin film transistor |
| 5309010 | Semiconductor device having improved thin film transistors |
| 5306928 | Diamond semiconductor device having a non-doped diamond layer for... |
| 5306951 | Sidewall silicidation for improved reliability and conductivity |
| 5304827 | Performance lateral double-diffused MOS transistor |
| 5302842 | Field-effect transistor formed over gate electrode |
| 5302846 | Semiconductor device having improved vertical insulated gate type... |
| 5300802 | Semiconductor integrated circuit device having single-element typ... |
| 5298787 | Semiconductor embedded layer technology including permeable base ... |
| 5296728 | Compound semiconductor device with different gate-source and gate... |
| 5294821 | Thin-film SOI semiconductor device having heavily doped diffusion... |
| 5294824 | High voltage transistor having reduced on-resistance |
| 5294814 | Vertical diamond field effect transistor |
| 5294811 | Thin film semiconductor device having inverted stagger structure,... |
| 5293052 | SOT CMOS device having differentially doped body extension for pr... |
| 5293056 | Semiconductor device with high off-breakdown-voltage and low on ... |
| 5293349 | Memory cell circuits, devices, systems and methods of operation |
| 5293059 | MOS semiconductor device with double-layer gate electrode structu... |
| 5293337 | Electrically erasable programmable read-only memory with electric... |
| 5291274 | Electron device having a current channel of dielectric material |
| 5291050 | MOS device having reduced gate-to-drain capacitance |
| 5289030 | Semiconductor device with oxide layer |