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| Number | Title | Issue Date |
| 7923179 | Exposure mask and pattern forming method therefor An exposure mask is constituted of hole-patterns whose scales are higher than the limit resolution of exposure light and which are repetitively aligned in X-Y directions with the prescribed pitch (ranging from 140 nm to 180 nm) therebetween, halftone phase shift reg... | 04/12/2011 |
| 7820343 | Method for producing a photomask, method for patterning a layer or layer stack and resist stack on a mask substrate Methods for producing a photomask or layer or stack patterning include applying two resists to a layer, a layer stack, or a mask substrate (collectively “the layer”). Sensitivity of the first resist with respect to the exposure dose is greater than sensitivity o... | 10/26/2010 |
| 7629088 | Mask defect repairing method and semiconductor device manufacturing method According to an aspect of the invention, there is provided a mask defect repairing method of repairing a defect caused by a foreign object on a light transmissive photomask, the method including moving the foreign object on a light transmission section of the light ... | 12/08/2009 |
| 7579122 | Method of exposure and attenuated type phase shift mask A method of exposing a surface to be exposed and an attenuated type phase shift mask for use in the method are provided herein. The attenuated type phase shift mask has a reference area allowing a light radiated from a light source to pass through and an amplitude a... | 08/25/2009 |
| 7517617 | Mask blank for use in EUV lithography and method for its production This invention relates to a mask blank for use in EUV lithography and a method for its production. The mask blank comprises a substrate with a front side and a rear side whereby a coating is applied to the front side for use as a mask in EUV lithography and t... | 04/14/2009 |
| 7399558 | Mask and manufacturing method thereof and exposure method A mask manufacturing method suitable for an exposure method wherein a mask on which a desired pattern and a supplementary pattern with formations smaller than those of the desired pattern are arrayed is illuminated, and the light which passed through the mask onto a... | 07/15/2008 |
| 7387853 | Use of a planarizing layer to improve multilayer performance in ultraviolet masks The present invention relates to fabricating a reticle or mask for use in an extreme ultraviolet (“EUV”) photolithographic process. The EUV reticle comprises a substrate, a planarizing layer formed over a surface of the substrate, and a reflective layer deposite... | 06/17/2008 |
| 7384712 | Photo mask, exposure method using the same, and method of generating data A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, a... | 06/10/2008 |
| 7381502 | Apparatus and method to improve the resolution of photolithography systems by improving the temperature stability of the reticle A mask for use in a photolithographic process. The mask includes a plate or substrate having first and second opposite surfaces, a first image on the first surface of the substrate and a second image on the second surface of the substrate. When the mask is used in a... | 06/03/2008 |
| 7378196 | Method of manufacturing mask for correcting optical proximity effect A mask corrects for an optical proximity effect (OPE). A dummy pattern having a phase-edge effect is formed on a mask substrate. The phase-edge effect reduces the intensity of light at the boundary of two transmitting regions from through transmitted light has a pha... | 05/27/2008 |
| 7378197 | Method of patterning photoresist on a wafer using a reflective mask with a multi-layer ARC A patterned reflective semiconductor mask uses a multiple layer ARC overlying an absorber stack that overlies a reflective substrate. The absorber stack has more than one layer and an upper layer of the absorber stack has a predetermined metal. The multiple layer AR... | 05/27/2008 |
| 7371484 | Photomask blank and method of fabricating a photomask from the same A photomask blank includes a hard mask having an excellent etch selectivity with respect to an opaque layer. The photomask blank includes a light-transmissive substrate, an opaque chromium layer disposed on the light-transmissive substrate, and a hard mask layer dis... | 05/13/2008 |
| 7368204 | Mask for laser crystallization and crystallization method using the same A mask for laser crystallization includes a transmissive portion defining a crystallization pattern and an alignment pattern. The alignment pattern includes a first pattern group having a size corresponding to the crystallization pattern and a second pattern group h... | 05/06/2008 |
| 7364821 | Laser mask and method of crystallization using the same Provided is a method for crystallizing using a laser mask for selectively crystallizing active regions without a laser shot mark, including: providing an array substrate in which N×M active regions are defined; positioning a laser mask having first and second block... | 04/29/2008 |
| 7364822 | Photomask, method for forming the same, and method for forming pattern using the photomask A mask pattern 40 including a light-shielding portion 41 constituted by a light-shielding film made of a chromium film or the like and phase shifters 42 and 43 is formed on a transparent substrate 30. The phase shifters 42 a... | 04/29/2008 |
| 7361434 | Phase shift mask Semitransparent and trenchlike, absorber-free structure elements are formed jointly on a photomask formed using phase mask technology. The trenchlike structure elements are formed as trench or mesa structure using CPL technology. In a layout, dense, but also if appr... | 04/22/2008 |
| 7361436 | Pattern formation method A mask pattern 40 including a light-shielding portion 41 constituted by a light-shielding film made of a chromium film or the like and phase shifters 42 and 43 is formed on a transparent substrate 30. The phase shifters 42 a... | 04/22/2008 |
| 7361433 | Photomask for forming photoresist patterns repeating in two dimensions and method of fabricating the same A photomask includes a transparent substrate, and a plurality of light-shielding patterns repeatedly aligned on the transparent substrate in two dimensions. Each of the light-shielding patterns has length and width measurements that differ from each other. Further, ... | 04/22/2008 |
| 7361457 | Real-time configurable masking Methods, systems, and media to define a portion of a circuit pattern with a source of real-time configurable imaging are disclosed. Embodiments include hardware and/or software for directing a beam through a mask onto a wafer surface to outline a circuit pattern hav... | 04/22/2008 |
| 7354683 | Lithography mask for imaging of convex structures A lithography mask has an angled structure element (O) formed by a first opaque segment (O1) and by a second opaque segment (O2). The structure element has at least one reflex angle (α). The angled structure element (O) includes at least one convex se... | 04/08/2008 |
| 7351503 | Fused silica pellicle in intimate contact with the surface of a photomask A fused silica pellicle for use on photomasks having increased durability and improved transmission uniformity and birefringence properties. The pellicle is to be intimately secured to the patterned surface of a photomask. ... | 04/01/2008 |
| 7351505 | Phase shift mask blank, phase shift mask, and pattern transfer method In a phase shift mask blank comprising a phase shift multilayer film on a substrate, the phase shift multilayer film consists of at least one layer of light absorption function film and at least one layer of phase shift function film, and the light absorption functi... | 04/01/2008 |
| 7351504 | Photomask blank substrate, photomask blank and photomask In a quadrangular photomask blank substrate with a length on each side of at least 6 inches, which has a pair of strip-like regions that extend from 2 to 10 mm inside each of a pair of opposing sides along an outer periphery of a substrate top surface, with a 2 mm e... | 04/01/2008 |
| 7348106 | Method for repairing a phase shift mask A method is disclosed for repairing an attenuated phase shift mask. The mask initially has a mask substrate coated with a predetermined shift layer material, a mask pattern layer, and an energy beam resist layer sequentially. After forming a predetermined mask patte... | 03/25/2008 |
| 7348105 | Reflective maskblanks A reflective mask and a reflective mask blank that can form a fine mask pattern with high accuracy in shape, achieve a sufficient contrast in a pattern inspection, and enable a pattern transfer with high accuracy. On a substrate (11), a multilayer reflective ... | 03/25/2008 |
| 7348108 | Design and layout of phase shifting photolithographic masks A method for defining a full phase layout for defining a layer of material in an integrated circuit is described. The method can be used to define, arrange, and refine phase shifters to substantially define the layer using phase shifting. Through the process, comput... | 03/25/2008 |
| 7344808 | Method of making photomask blank substrates A photomask blank substrate is made by polishing a starting substrate to a specific flatness in a principal surface region on a top surface of the substrate so as to form a polished intermediate product, then additionally polishing the intermediate product. Substrat... | 03/18/2008 |
| 7344807 | Gassing-free exposure mask The present invention relates to an exposure mask for structuring a photoresist layer on a substrate wafer, in which an inorganic adhesive is used as an adhesive device for connecting a reticle having a lithographic structure, a frame and a pellicle. For chemical re... | 03/18/2008 |
| 7344806 | Method of producing phase shift mask blank, method of producing phase shift mask, phase shift mask blank, and phase shift mask There is disclosed a method of producing a phase shift mask blank wherein the method includes at least a step of forming one or more layers of phase shift films on a substrate by a sputtering method, and in the step, the phase shift films are formed by the sputterin... | 03/18/2008 |
| 7344824 | Alternating aperture phase shift photomask having light absorption layer The present invention generally relates to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes a l... | 03/18/2008 |
| 7344805 | Mask and method for producing thereof and a semiconductor device using the same A mask is provided wherein the mask has: a plate-like member having a mask pattern area and at least one pn junction; and a current supplying area which supplies a current to the pn junction, and a Peltier effect is caused by supplying a current to the pn junction, ... | 03/18/2008 |
| 7332250 | Photomask The photomask of this invention includes, on a transparent substrate, a semi-shielding portion having a transmitting property against exposing light, a transparent portion having a transmitting property against the exposing light and surrounded with the semi-shieldi... | 02/19/2008 |
| RE40084 | Optical proximity correction Method for utilizing halftoning structures to manipulate the relative magnitudes of diffraction orders to ultimately construct the desired projected-image. At the resolution limit of the mask maker, this is especially useful for converting strongly shifted, no-0 | 02/19/2008 |
| 7329474 | Photomask blank, photomask, and method of manufacture A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers inclu... | 02/12/2008 |
| 7329475 | Method of selecting photomask blank substrates Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwi... | 02/12/2008 |
| 7326502 | Multilayer coatings for EUV mask substrates Techniques, methods, and structures disclosed in relation to extreme ultraviolet (EUV) lithography in semiconductor processing. In one exemplary implementation, a method may comprise using ion beam deposition to deposit a first multilayer stack of thin films on a su... | 02/05/2008 |
| 7323277 | Photomask A photomask is proposed which comprises a transparent substrate and a light shielding film formed on a principal surface of the substrate, with the light shielding film having an aperture pattern thereon. And, a recess is provided at the portion of the transparent s... | 01/29/2008 |
| 7323276 | Substrate for photomask, photomask blank and photomask A substrate for photomask has a top surface and a back surface, the substrate being square in shape, an end surface formed along the thickness thereof and a chamfered surface formed on a perimeter edge region where the end surface and the top surface meet and anothe... | 01/29/2008 |
| 7316870 | Device manufacturing method, mask set for use in the method, data set for controlling a programmable patterning device, method of generating a mask pattern and a computer program Isolated dark features, e.g. contact holes or lines, are exposed in a double exposure, using different illumination settings in the two exposures. ... | 01/08/2008 |
| 7316871 | Laser mask and crystallization method using the same A crystallization method using a mask includes providing a substrate having a semiconductor layer; positioning a mask over the substrate, the mask having first, second and third blocks, each block having a periodic pattern including a plurality of transmitting regio... | 01/08/2008 |
