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| Number | Title | Issue Date |
| 6450117 | Directing a flow of gas in a substrate processing chamber A substrate processing chamber 30 comprising a first gas distributor 65 adapted to provide a process gas into the chamber 30 to process the substrate 25, a second gas distributor 215 adapted to provide a cleaning gas into the chamber 30 to clean the chamb... | 09/17/2002 |
| 6423178 | Apparatus for plasma process A plasma processing apparatus that excites plasma in a container and processes an object in the plasma. This plasma processing apparatus includes: a gas supply system that supplies a process gas required for exciting the plasma; an exhaustion system that ... | 07/23/2002 |
| 6309978 | Beat frequency modulation for plasma generation An apparatus and method for providing a modulated-bias plasma are described. In particular, a radio frequency (RF) source or collector includes one or more sources to provide differing driving frequencies or bias frequencies, respectively. These frequenci... | 10/30/2001 |
| 6260510 | PCVD apparatus and method of manufacturing an optical fiber, a preform rod and a jacket tube as well as the optical fiber manufactured therewith The invention relates to an apparatus for performing Plasma Chemical Vapor Deposition (PCVD), whereby one or more layers of silica can be deposited on an elongated vitreous substrate, the apparatus comprising an elongated microwave guide which emerges int... | 07/17/2001 |
| 6237526 | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space and including a substrate support therein for supporting a substrate in the processing space and a gas inlet for introducing a process ... | 05/29/2001 |
| 6231673 | Manufacturing method of semiconductor wafer, semiconductor manufacturing apparatus, and semiconductor device A carrier portion (15) carriers a strip wafer (S) longitudinally in a carrying direction (16). A processing portion (17) applies local processing such as plasma etching, thermal oxidation, CVD processing, and exposure to a partial processing region (18) o... | 05/15/2001 |
| 6210485 | Chemical vapor deposition vaporizer The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the vaporization of a metal-oxide film, such as a bariu... | 04/03/2001 |
| 6203621 | Vacuum chuck for holding thin sheet material A vacuum chuck (34) for holding thin sheet material, particularly during high-temperature manufacturing processes, and an apparatus (10) for forming a substantially uniform coating of a substance on a thin sheet material. The vacuum chuck includes a chuck... | 03/20/2001 |
| 6203715 | Method for the manufacture of a thin film actuated mirror array An inventive method for the manufacture of a thin film actuated mirror array comprises the steps of: preparing an active matrix including a substrate, an array of switching devices and an array of connecting terminals; forming a first sacrificial layer in... | 03/20/2001 |
| 6199506 | Radio frequency supply circuit for in situ cleaning of plasma-enhanced chemical vapor deposition chamber using NF3 or NF3/He mixture A plasma-enhanced chemical vapor deposition system includes a balancing inductor in the circuit path between the radio frequency generator and the "showerhead" that is used to introduce reactant gases to the system. The balancing inductor reduces the reso... | 03/13/2001 |
| 6196155 | Plasma processing apparatus and method of cleaning the apparatus A plasma processing apparatus comprises a plasma generating chamber including a side wall and a roof-plate to cover the upper part of the side wall, in which plasma is generated; a plurality of magnets, one group of the magnets being arranged on the roof-... | 03/06/2001 |
| 6186090 | Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor Apparatus and method for the vacuum deposition of at least two different layers of thin film material onto a substrate by two different vacuum deposition processes. Also disclosed is a novel linear applicator for using microwave enhanced CVD to uniformly ... | 02/13/2001 |
| 6182604 | Hollow cathode for plasma doping system A plasma doping apparatus includes a hollow cathode to increase throughput and uniformity of ion implantations in a target. The hollow cathode is located adjacent an anode and a target cathode on which a target is placed. An ionizable gas is provided in a... | 02/06/2001 |
| 6178920 | Plasma reactor with internal inductive antenna capable of generating helicon wave The present invention employs an internal inductive antenna capable of generating a helicon wave for generating a plasma. One embodiment of the present invention employs loop type antenna secured within a bell shaped portion of the chamber. Another embodi... | 01/30/2001 |
| 6176932 | Thin film deposition apparatus An apparatus for manufacturing information recording disks is disclosed. The apparatus includes a deposition chamber for providing an undercoat layer to a substrate to be treated, a deposition chamber for providing a magnetic recording layer on the substr... | 01/23/2001 |
| 6176931 | Wafer clamp ring for use in an ionized physical vapor deposition apparatus Improvements are described for a wafer clamp ring used in an IPVD apparatus to provide cooling for the wafer clamp ring, to protect the wafer clamp ring from ion bombardment, and to prevent damage to the wafer. The wafer clamp ring is placed on a cooling ... | 01/23/2001 |
| 6173674 | Plasma reactor with a deposition shield A reactor 20 includes a shield 50 which prevents the deposition of materials along a line-of-sight path from a wafer 26 toward and onto an electrode 32, or a window 38 which couples an electrode 32 to a reaction chamber of the reactor 20. The shield can b... | 01/16/2001 |
| 6174371 | Substrate treating method and apparatus A substrate treating method and apparatus are disclosed which are capable of heating a substrate in a stable atmosphere including the vapor of a treating liquid, without permitting the vapor of the treating liquid to condense on the substrate. The vapor o... | 01/16/2001 |
| 6173673 | Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber A processing system for processing a substrate with a plasma comprises a processing chamber defining a process space including a support structure for supporting a substrate within the process space. A gas inlet in the chamber introduces a process gas int... | 01/16/2001 |
| 6171437 | Semiconductor manufacturing device A semiconductor manufacturing device comprises a holder having sealing members and supporting a semiconductor substrate so that an open space is formed above the semiconductor substrate and a sealed space is formed below the semiconductor substrate. The s... | 01/09/2001 |
| 6170431 | Plasma reactor with a deposition shield A reactor 20 includes a shield 50 which prevents the deposition of materials along a line-of-sight path from a wafer 26 toward and onto an electrode 32, or a window 38 which couples an electrode 32 to a reaction chamber of the reactor 20. The shield can b... | 01/09/2001 |
| 6165313 | Downstream plasma reactor system with an improved plasma tube sealing configuration A downstream plasma reactor system is presented. The reactor system includes a reaction chamber. An inlet conduit is connected to the reaction chamber. A plasma tube is coupled to the inlet conduit. A sealing member is interposed between the plasma tube a... | 12/26/2000 |
| 6165274 | Plasma processing apparatus and method A plasma processing apparatus for plasma-processing a substrate arranged in a reaction chamber using a high frequency power supplied by a high frequency power introduction means, wherein said high frequency power introduction means comprises a cathode ele... | 12/26/2000 |
| 6159299 | Wafer pedestal with a purge ring A wafer pedestal with a purge ring that circumscribes a peripheral edge of the wafer pedestal. The purge ring contains plurality of passages that are located proximate the peripheral edge of said wafer pedestal such that purge gas is directed towards the ... | 12/12/2000 |
| 6158384 | Plasma reactor with multiple small internal inductive antennas The present invention employs a plurality of small inductive antennas to generate a processing plasma. In one embodiment, small coil antennas are secured within the chamber so that both of the pole regions of the antennas couple power to the plasma. The a... | 12/12/2000 |
| 6159300 | Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device An apparatus for forming a non-single-crystal semiconductor thin film comprising a film deposition chamber having a film-forming space surrounded by a film deposition chamber wall and a beltlike substrate, and an external chamber surrounding the depositio... | 12/12/2000 |
| 6159301 | Substrate holding apparatus for processing semiconductor A substrate-holding apparatus for holding a semiconductor substrate in a semiconductor processor is characterized in that the apparatus includes a mount block made of, e.g., aluminum nitrate with a high-frequency electrode embedded therein and a heating b... | 12/12/2000 |
| 6155202 | Plasma processing apparatus, matching box, and feeder In a plasma processing apparatus, in a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode, one o... | 12/05/2000 |
| 6152072 | Chemical vapor deposition coating of fibers using microwave application Chemical vapor deposition coating is carried out in a cylindrical cavity. The fibers are heated by a microwave source that is uses a TM0N0 mode, where O is an integer, and produces a field that depends substantially only on radius. The fibers are observed... | 11/28/2000 |
| 6149760 | Plasma processing apparatus An inductively coupled type dry etching apparatus has a spiral RF antenna disposed on the ceiling wall of a process chamber. A susceptor is arranged in the process chamber, for mounting a semiconductor wafer thereon. The ceiling wall has upper and lower l... | 11/21/2000 |
| 6149730 | Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor In an apparatus for forming a film of a semiconductor device in which chemical vapor deposition is used to accumulate insulation films such as a carbon-compound film and a silicon-oxide or silicon-nitride film on a silicon substrate, it is possible to pre... | 11/21/2000 |
| 6149729 | Film forming apparatus and method A film forming apparatus includes a chamber in which a thin film is formed on a semiconductor wafer by supplying a process gas, the interior of which is then cleaned by a cleaning gas, while the gas in the chamber is exhausted by a vacuum system. The vacu... | 11/21/2000 |
| 6148763 | Deposited film forming apparatus In a deposited film forming apparatus, at least part of the inner wall surfaces of a reactor or surfaces of structural component parts on which films are deposited is constituted of a porous ceramic material. This can prevent film come-off of deposited fi... | 11/21/2000 |
| 6146492 | Plasma process apparatus with in situ monitoring, monitoring method, and in situ residue cleaning method A plasma process apparatus having a plasma chamber with in situ monitoring, a monitoring method, and a method for in situ cleaning a plasma chamber. The apparatus includes a sampling manifold which induces flow of a sample gas from a plasma chamber throug... | 11/14/2000 |
| 6146462 | Structures and components thereof having a desired surface characteristic together with methods and apparatuses for producing the same Methods and apparatus for plasma modifying a substrate are disclosed along with associated techniques for applying coatings to the substrate. Particular utility has been found using a hollow cathode to generate the plasma along with magnetic focusing mean... | 11/14/2000 |
| 6143078 | Gas distribution system for a CVD processing chamber The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The firs... | 11/07/2000 |
| 6139681 | Plasma assisted process vessel cleaner A system and method for removing plasma contaminants from a vacuum vessel requires circulating a fluid through the vacuum vessel and thereby exposing the fluid to the contaminants. When the contaminants contact the fluid, they are trapped and become suspe... | 10/31/2000 |
| 6138606 | Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility An ion source apparatus is disclosed in this invention. The ion source apparatus includes an anode having an interior space for containing a plasma and an opening into the space. The ion source apparatus further includes a hollow cathode within the space.... | 10/31/2000 |
| 6135053 | Apparatus for forming a deposited film by plasma chemical vapor deposition A film-forming method and apparatus by high frequency plasma CVD, characterized by using a specific high frequency power introduction means comprising at least an electrode for introducing a high frequency power into a deposition chamber containing a subs... | 10/24/2000 |
| 6132513 | Process chemistry resistant manometer A manometer resistant to chemical change caused by process chemistry used in a plasma processing chamber is provided. The manometer includes a pressure sensitive diaphragm attached to a housing wherein at least a portion of the pressure sensitive diaphrag... | 10/17/2000 |
