| Patent No. | Patent Title: |
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| 6660630 | Method for forming a tapered dual damascene via portion with impr... |
| 6660628 | Method of MOCVD Ti-based barrier metal thin films with tetrakis ... |
| 6660624 | Method for reducing fluorine induced defects on a bonding pad sur... |
| 6656832 | Plasma treatment method for fabricating microelectronic fabricati... |
| 6649504 | Method for fabricating high aspect ratio electrodes |
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| 6638810 | Tantalum nitride CVD deposition by tantalum oxide densification |
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| 6635510 | Method of making a parylene coating for soldermask |
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| 6627544 | Method of making a metal film pattern |
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| 6617241 | Method of thick film planarization |
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| 6607939 | Method of making a multi-layer interconnect |
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| 6605479 | Method of using damaged areas of a wafer for process qualificatio... |
| 6602779 | Method for forming low dielectric constant damascene structure wh... |
| 6602734 | Method of manufacturing a semiconductor device |
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| 6599825 | Method for forming wiring in semiconductor device |
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| 6586330 | Method for depositing conformal nitrified tantalum silicide films... |
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| 6576550 | `Via first` dual damascene process for copper metallization |
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