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| Number | Title | Issue Date |
| 8188463 | Organic light emitting diode with magnetic structure for improved current adaptability An organic light emitting device includes a cathode and an optional substrate external to the device. The device further includes at least one film layer disposed on at least one of the cathode or the substrate. The at least one film layer includes at least one of a... | 05/29/2012 |
| 8188483 | Silicon carbide devices having smooth channels Power devices are provided including a p-type conductivity well region and a buried p+ conductivity region in the p-type conductivity well region. An n+ conductivity region is provided on the buried p+ conductivity region. A channel ... | 05/29/2012 |
| 8183570 | Thin film transistor array panel A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed withou... | 05/22/2012 |
| 8183611 | Spin transistor using N-type and P-type double carrier supply layer structure A spin transistor that includes: a semiconductor substrate including an upper cladding layer and a lower cladding layer, and a channel layer interposed between the upper and lower cladding layers; a ferromagnetic source and a ferromagnetic drain formed on the semico... | 05/22/2012 |
| 8183117 | Device layout in integrated circuits to reduce stress from embedded silicon-germanium An integrated circuit including one or more transistors in which source and drain regions are formed as embedded silicon-germanium (eSiGe). Guard ring structures in the integrated circuit are formed in single-crystal silicon, rather than in eSiGe. In one example, p-... | 05/22/2012 |
| 8178413 | Low-temperature grown high quality ultra-thin CoTiOgate dielectrics A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate oxides formed from alloys such as cobalt-titanium are thermodynamically stable s... | 05/15/2012 |
| 8178431 | Process for producing a PN homojunction in a nanostructure The invention relates to a process for producing a p-n junction in a nanostructure, in which the nanostructure has one or more nanoconstituents made of a semiconductor material with a single type of doping having one conductivity type, characterized in that it inclu... | 05/15/2012 |
| 8178915 | Unitary floating-gate electrode with both N-type and P-type gates An analog floating-gate electrode in an integrated circuit, and method of fabricating the same, in which trapped charge can be stored for long durations. The analog floating-gate electrode is formed in a polycrystalline silicon gate level, and includes n-type and p-... | 05/15/2012 |
| 8168976 | Display panel and method for manufacturing the same A display panel includes a substrate having a display area and a blank area. The blank area includes at least one of a non-metal line region and a metal-line region. The non-metal line region includes a plurality of insulating patterns and a first conductive pattern... | 05/01/2012 |
| 8158998 | High-reflectivity and low-defect density LED structure The present invention discloses a high-reflectivity and low-defect density LED structure. A patterned dielectric layer is embedded in a sapphire substrate via semiconductor processes, such as etching and deposition. The dielectric layer is formed of two materials wh... | 04/17/2012 |
| 8159023 | Semiconductor device A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed... | 04/17/2012 |
| 8159009 | Semiconductor device having strain material A semiconductor device having strain material is disclosed. In a particular embodiment, the semiconductor device includes a first cell including a first gate between a first drain and a first source. The semiconductor device also includes a second cell adjacent to t... | 04/17/2012 |
| 8160271 | Variable noise masking during periods of substantial silence Methods and systems for masking audio noise are disclosed. One apparatus includes a silence detector configured to detect a period of substantial silence in an audio signal; a masking noise source operably coupled to the silence detector, the masking noise source co... | 04/17/2012 |
| 8158997 | Optical element package and method of manufacturing the same An optical element package includes: an optical element in a form of a chip, and a lens resin having a convex lens surface covering an optical functional surface of the optical element. The convex lens surface is formed as a rough surface having a plurality of minut... | 04/17/2012 |
| 8154113 | Interconnect and test assembly including an interconnect An interconnect includes an elastic body, an electric conductor and a spacer. The elastic body has a first surface, a second surface, a first hole extending from the first surface to the second surface, and a second hole extending from the first surface to the secon... | 04/10/2012 |
| 8154092 | Silicon carbide MEMS structures and methods of forming the same MEMS structures that include silicon carbide micromechanical components, as well as methods of forming and using the same, are provided. The silicon carbide micromechanical components may be integrated on the same structure with electronic components that control or... | 04/10/2012 |
| 8154091 | Integrated electronic circuit including a thin film portion based on hafnium oxide An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very ... | 04/10/2012 |
| 8148711 | Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), a resistance... | 04/03/2012 |
| 8148186 | Long-wavelength resonant-cavity light-emitting diode An efficient long-wavelength light-emitting diode has a resonant-cavity design. The light-emitting diode preferably has self-organized (In,Ga)As or (In,Ga)(As,N) quantum dots in the light-emitting active region, deposited on a GaAs substrate. The light-emitting diod... | 04/03/2012 |
| 8148763 | Three-dimensional semiconductor devices Provided are a three-dimensional semiconductor device and a method of operating the same. The three-dimensional semiconductor device includes: a plurality of word line structures on a substrate; active semiconductor patterns between the plurality of word line struct... | 04/03/2012 |
| 8150118 | Image recording apparatus, image recording method and image recording program stored on a computer readable medium There is provided an image recording apparatus for assisting an observer who observes an observed person. The image recording apparatus includes an image-capturing section that captures an image of the observed person, an observation result input section that inputs... | 04/03/2012 |
| 8143622 | Display panel A display panel including a first substrate, a second substrate opposite to the first substrate and a display medium between the first substrate and the second substrate is provided. The first substrate has a scan line, a data line and an active device electrically ... | 03/27/2012 |
| 8143667 | Semiconductor device having non-volatile memory and method of fabricating the same A memory cell of a non-volatile memory device, comprises: a select transistor gate of a select transistor on a substrate, the select transistor gate comprising: a gate dielectric pattern; and a select gate on the gate dielectric pattern; first and second memory cell... | 03/27/2012 |
| 8134150 | Hydrazine-free solution deposition of chalcogenide films A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the soluti... | 03/13/2012 |
| 8133821 | Method of manufacturing porous insulating film, method of manufacturing semiconductor device, and semiconductor device A method includes forming an insulating film over a substrate by introducing a cyclic siloxane compound having a cyclic siloxane as a skeleton and having at least one volatile hydrocarbon group bonded to a side chain, and a silicon-containing compound into a plasma,... | 03/13/2012 |
| 8129796 | Semiconductor device There is provided a high-integrated complementary metal-oxide semiconductor static random-access memory including an inverter. The inverter includes: a first pillar that is formed by integrating a first-conductivity-type semiconductor, a second-conductivity-type sem... | 03/06/2012 |
| 8129226 | Power lead-on-chip ball grid array package A packaging assembly (30), such as a ball grid array package, is formed which distributes power across an interior region of an integrated circuit die (52) by using an encapsulated patterned leadframe conductor (59) that is disposed over the die... | 03/06/2012 |
| 8130978 | Dynamic switching of microphone inputs for identification of a direction of a source of speech sounds This disclosure describes techniques of automatically identifying a direction of a speech source relative to an array of directional microphones using audio streams from some or all of the directional microphones. Whether the direction of the speech source is identi... | 03/06/2012 |
| 8125035 | CMOS fabrication process Ultra high temperature (UHT) anneals above 1200 C for less than 100 milliseconds for PMOS transistors reduce end of range dislocations, but are incompatible with stress memorization technique (SMT) layers used to enhance NMOS on-state current. This invention reverse... | 02/28/2012 |
| 8125082 | Reduction of silicide formation temperature on SiGe containing substrates A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co ... | 02/28/2012 |
| 8124475 | Integrated circuit arrangement with capacitor and fabrication method An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an activ... | 02/28/2012 |
| 8124956 | Phase change memory devices A phase change material including a high adhesion phase change material formed on a dielectric material and a low adhesion phase change material formed on the high adhesion phase change material. The high adhesion phase change material includes a greater amount of a... | 02/28/2012 |
| 8126160 | Use of non-audible band to relay information for echo cancellation in a distributed media system Particular embodiments provide for attenuating one or more microphone signals in a teleconferencing system upon detecting a non-audible signal. A far end voice signal is received from a sound source. A non-audible signal is added to the far end voice signal to creat... | 02/28/2012 |
| 8124955 | Memory devices and methods of forming the same Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of adjacent memory cells are vertically offset and positioned on opposite si... | 02/28/2012 |
| 8120082 | Ferroelectric memory device and method for manufacturing the same Disclosed relates to a ferroelectric memory device that is manufactured easily, operates at low voltage and has excellent data preservation period, and a method of manufacturing the same. In the present invention, a ferroelectric layer 60 is formed on a part ... | 02/21/2012 |
| 8120079 | Light-sensing device for multi-spectral imaging A method of fabricating multi-spectral photo-sensors including photo-diodes incorporating stacked epitaxial superlattices monolithically integrated with CMOS devices on a common semiconductor substrate. ... | 02/21/2012 |
| 8120102 | Semiconductor device A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate e... | 02/21/2012 |
| 8120158 | Laminate electronic device A laminate electronic device comprises a first semiconductor chip, the first semiconductor chip defining a first main face and a second main face opposite to the first main face, and having at least one electrode pad on the first main face. The laminate electronic d... | 02/21/2012 |
| 8119496 | Semiconductor device and manufacturing method thereof A thin semiconductor wafer, on which a top surface structure and a bottom surface structure that form a semiconductor chip are formed, is affixed to a supporting substrate by a double-sided adhesive tape. Then, on the thin semiconductor wafer, a trench to become a s... | 02/21/2012 |
| 8120020 | Organic light emitting device An organic light emitting device (OLED) including: a substrate; a first electrode; a second electrode facing the first electrode; a first blue light emitting layer, a green light emitting layer, a red light emitting layer, and a second blue light emitting layer all ... | 02/21/2012 |
