| Patent No. | Patent Title: |
| 5429995 | Method of manufacturing silicon oxide film containing fluorine |
| 5425843 | Process for semiconductor device etch damage reduction using ... |
| 5424246 | Method of manufacturing semiconductor metal wiring layer by reduc... |
| 5422307 | Method of making an ohmic electrode using a TiW layer and an Au l... |
| 5418185 | Method of making schottky diode with guard ring |
| 5413952 | Direct wafer bonded structure method of making |
| 5413959 | Method of modifying transparent conductive oxide film including m... |
| 5409683 | Method for producing metal oxide aerogels |
| 5407868 | Method of making an electrode tip for a tunnel current sensing de... |
| 5405592 | Non-densified silicon nitride beta-phase material |
| 5403780 | Method enhancing planarization etchback margin, reliability, and ... |
| 5403406 | Silicon wafers having controlled precipitation distribution |
| 5401481 | Processes for removing acid components from gas streams |
| 5401482 | Talc substances having specific surface properties and method of ... |
| 5397742 | Method for forming tungsten plug for metal wiring |
| 5395605 | Low water uptake precipitated silica particulates |
| 5389353 | Fluidized bed process for chlorinating titanium-containing materi... |
| 5389581 | High density TEOS-based film for intermetal dielectrics |
| 5387557 | Method for manufacturing semiconductor devices using heat-treatme... |
| 5384287 | Method of forming a semiconductor device having self-aligned cont... |
| 5384267 | Method of forming infrared detector by hydrogen plasma etching to... |
| 5384289 | Reductive elimination chemical vapor deposition processes utilizi... |
| 5382419 | Production of high-purity polycrystalline silicon rod for semicon... |
| 5380510 | Silica gel manufactured by a hydrothermal polymerization followin... |
| 5380511 | Process for producing silicon carbide-base complex |
| 5376348 | Method for making silica gel wtih a large active surface area |
| 5376592 | Method of heat-treating a semiconductor wafer to determine proces... |
| 5376579 | Schemes to form silicon-on-diamond structure |
| 5374412 | Highly polishable, highly thermally conductive silicon carbide |
| 5374594 | Gas-based backside protection during substrate processing |
| 5371039 | Method for fabricating capacitor having polycrystalline silicon f... |
| 5371047 | Chip interconnection having a breathable etch stop layer |
| 5371046 | Method to solve sog non-uniformity in the VLSI process |
| 5368833 | Silica sols having high surface area |
| 5366645 | Anti-blocking agent containing modified amorphous silica |
| 5365877 | Method of growing semiconductor in vapor phase |
| 5362667 | Bonded wafer processing |
| 5356835 | Method for forming low resistance and low defect density tungsten... |
| 5356607 | Process for the hydrothermal production of crystalline sodium dis... |
| 5354706 | Formation of uniform dimension conductive lines on a semiconducto... |
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